Nioblum trilayer process for superconducting circuits

J. M. Murduck; J. Porter; W. Dozier; R. Sandell; J. Burch; J. Bulman; C. Dang; L. Lee; H. Chan; R. W. Simon; A. H. Silver

doi:10.1109/20.92490

Nioblum trilayer process for superconducting circuits

J. M. Murduck
, J. Porter
, W. Dozier
, R. Sandell
, J. Burch
, J. Bulman
, C. Dang
, L. Lee
, H. Chan
, R. W. Simon
, A. H. Silver

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We have developed an improved in situ trilayer process for fabricating Josephson circuits. By controlling a multilayer artificial barrier of oxidized aluminum, current densities from 6 to 7000 A/cm2 are reproducibly and accurately obtained. Junction leakage is low, with Vm values typically ≥ 40 mV, and is found to be dependent on the niobium deposition rate. Within TRW the niobium junctions are being used for parametric amplifiers, A/D converters, VCO's, IR detectors, and digital circuits. In addition, TRW niobium junctions have successfully been used in the NBS Josephson voltage standard. We will describe the fabrication process and characterize the films made.

Original language	English
Pages (from-to)	1139-1142
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	25
Issue number	2
DOIs	https://doi.org/10.1109/20.92490
State	Published - Mar 1989

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abstract = "We have developed an improved in situ trilayer process for fabricating Josephson circuits. By controlling a multilayer artificial barrier of oxidized aluminum, current densities from 6 to 7000 A/cm2 are reproducibly and accurately obtained. Junction leakage is low, with Vm values typically ≥ 40 mV, and is found to be dependent on the niobium deposition rate. Within TRW the niobium junctions are being used for parametric amplifiers, A/D converters, VCO's, IR detectors, and digital circuits. In addition, TRW niobium junctions have successfully been used in the NBS Josephson voltage standard. We will describe the fabrication process and characterize the films made.",

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year = "1989",

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T1 - Nioblum trilayer process for superconducting circuits

AU - Murduck, J. M.

AU - Porter, J.

AU - Dozier, W.

AU - Sandell, R.

AU - Burch, J.

AU - Bulman, J.

AU - Dang, C.

AU - Lee, L.

AU - Chan, H.

AU - Simon, R. W.

AU - Silver, A. H.

PY - 1989/3

Y1 - 1989/3

N2 - We have developed an improved in situ trilayer process for fabricating Josephson circuits. By controlling a multilayer artificial barrier of oxidized aluminum, current densities from 6 to 7000 A/cm2 are reproducibly and accurately obtained. Junction leakage is low, with Vm values typically ≥ 40 mV, and is found to be dependent on the niobium deposition rate. Within TRW the niobium junctions are being used for parametric amplifiers, A/D converters, VCO's, IR detectors, and digital circuits. In addition, TRW niobium junctions have successfully been used in the NBS Josephson voltage standard. We will describe the fabrication process and characterize the films made.

AB - We have developed an improved in situ trilayer process for fabricating Josephson circuits. By controlling a multilayer artificial barrier of oxidized aluminum, current densities from 6 to 7000 A/cm2 are reproducibly and accurately obtained. Junction leakage is low, with Vm values typically ≥ 40 mV, and is found to be dependent on the niobium deposition rate. Within TRW the niobium junctions are being used for parametric amplifiers, A/D converters, VCO's, IR detectors, and digital circuits. In addition, TRW niobium junctions have successfully been used in the NBS Josephson voltage standard. We will describe the fabrication process and characterize the films made.

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DO - 10.1109/20.92490

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VL - 25

SP - 1139

EP - 1142

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 2

ER -

Nioblum trilayer process for superconducting circuits

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