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Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling
Jae Yoon Lee, Youngmin Kim, Min Hwi Kim, Seoyeon Go, Seung Wook Ryu, Jae Yeon Lee, Tae Jung Ha, Soo Gil Kim, Seongjae Cho, Byung Gook Park
Research output: Contribution to journal › Article › peer-review
6
Scopus
citations