New Submicron Mosfet Structural Concept for Suppression of Hot Carriers

A. F. Tasch; H. Shin; C. M. Maziar

doi:10.1049/el:19900026

New Submicron Mosfet Structural Concept for Suppression of Hot Carriers

A. F. Tasch, H. Shin, C. M. Maziar

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A new structural concept for submicron MOSFETs is described for substantially suppressing adverse hot carrier effects. This structure differs from the well known LDD type of structure in that it has a more lightly doped N-type region located behind a very shallow, steeply profiled source/drain junction.

Original language	English
Pages (from-to)	39-41
Number of pages	3
Journal	Electronics Letters
Volume	26
Issue number	1
DOIs	https://doi.org/10.1049/el:19900026
State	Published - 1990

Keywords

FETs
Integrated circuits
MOS structures and devices
Semiconductor devices and materials

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10.1049/el:19900026

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@article{55f41c3eb8a845b889a523d8be6199e7,

title = "New Submicron Mosfet Structural Concept for Suppression of Hot Carriers",

abstract = "A new structural concept for submicron MOSFETs is described for substantially suppressing adverse hot carrier effects. This structure differs from the well known LDD type of structure in that it has a more lightly doped N-type region located behind a very shallow, steeply profiled source/drain junction.",

keywords = "FETs, Integrated circuits, MOS structures and devices, Semiconductor devices and materials",

author = "Tasch, \{A. F.\} and H. Shin and Maziar, \{C. M.\}",

year = "1990",

doi = "10.1049/el:19900026",

language = "English",

volume = "26",

pages = "39--41",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "1",

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TY - JOUR

T1 - New Submicron Mosfet Structural Concept for Suppression of Hot Carriers

AU - Tasch, A. F.

AU - Shin, H.

AU - Maziar, C. M.

PY - 1990

Y1 - 1990

N2 - A new structural concept for submicron MOSFETs is described for substantially suppressing adverse hot carrier effects. This structure differs from the well known LDD type of structure in that it has a more lightly doped N-type region located behind a very shallow, steeply profiled source/drain junction.

AB - A new structural concept for submicron MOSFETs is described for substantially suppressing adverse hot carrier effects. This structure differs from the well known LDD type of structure in that it has a more lightly doped N-type region located behind a very shallow, steeply profiled source/drain junction.

KW - FETs

KW - Integrated circuits

KW - MOS structures and devices

KW - Semiconductor devices and materials

UR - https://www.scopus.com/pages/publications/0025699596

U2 - 10.1049/el:19900026

DO - 10.1049/el:19900026

M3 - Article

AN - SCOPUS:0025699596

SN - 0013-5194

VL - 26

SP - 39

EP - 41

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

New Submicron Mosfet Structural Concept for Suppression of Hot Carriers

Abstract

Keywords

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