A new structural concept for submicron MOSFETs is described for substantially suppressing adverse hot carrier effects. This structure differs from the well known LDD type of structure in that it has a more lightly doped N-type region located behind a very shallow, steeply profiled source/drain junction.
|Number of pages||3|
|State||Published - 1990|
- Integrated circuits
- MOS structures and devices
- Semiconductor devices and materials