Abstract
The dependency of device degradation on bending direction and channel length is analyzed in terms of bandgap states in amorphous indium-gallium-zinc-oxide (a-IGZO) films. The strain distribution in an a-IGZO film under perpendicular and parallel bending of a device with various channel lengths is investigated by conducting a three-dimensional mechanical simulation. Based on the obtained strain distribution, new device simulation structures are suggested in which the active layer is defined as consisting of multiple regions. The different arrangements of a highly strained region and density of states is proportional to the strain account for the measurement tendency. The analysis performed using the proposed structures reveals the causes underlying the effects of different bending directions and channel lengths, which cannot be explained using the existing simulation methods in which the active layer is defined as a single region.
| Original language | English |
|---|---|
| Article number | 6167 |
| Journal | Materials |
| Volume | 14 |
| Issue number | 20 |
| DOIs | |
| State | Published - 1 Oct 2021 |
Bibliographical note
Funding Information:Funding: This research was supported by the National Research Foundation (NRF), Korea, under project BK21 FOUR. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2019R1A2C1084063).
Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
Keywords
- Amorphous indium-gallium-zinc-oxide (a-IGZO)
- Bending stress
- Channel length dependency
- Device simulation
- Flexible thin-film transistor (TFT)
- Oxide TFT
- Strain simulation