New modeling method for the dielectric relaxation of a DRAM cell capacitor

Sujin Choi, Wookyung Sun, Hyungsoon Shin

Research output: Contribution to journalArticlepeer-review

Abstract

This study proposes a new method for automatically synthesizing the equivalent circuit of the dielectric relaxation (DR) characteristic in dynamic random access memory (DRAM) without frequency dependent capacitance measurement. Charge loss due to DR can be observed by a voltage drop at the storage node and this phenomenon can be analyzed by an equivalent circuit. The Havariliak-Negami model is used to accurately determine the electrical characteristic parameters of an equivalent circuit. The DRAM sensing operation is performed in HSPICE simulations to verify this new method. The simulation demonstrates that the storage node voltage drop resulting from DR and the reduction in the sensing voltage margin, which has a critical impact on DRAM read operation, can be accurately estimated using this new method.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalSolid-State Electronics
Volume140
DOIs
StatePublished - Feb 2018

Keywords

  • Dielectric relaxation (DR)
  • Dynamic random access memory (DRAM)
  • Equivalent circuit
  • Modeling

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