Negative differential resistance in single-wall carbon nanotube network

S. H. Jhang; G. T. Kim; S. W. Lee; Y. W. Park; P. Bernier

doi:10.1016/S0379-6779(00)01013-4

Negative differential resistance in single-wall carbon nanotube network

S. H. Jhang, G. T. Kim, S. W. Lee, Y. W. Park, P. Bernier

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.

Original language	English
Pages (from-to)	1243-1244
Number of pages	2
Journal	Synthetic Metals
Volume	121
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)01013-4
State	Published - 15 Mar 2001

Keywords

Conductivity
Fullerenes and derivatives
Transport measurements

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title = "Negative differential resistance in single-wall carbon nanotube network",

abstract = "The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.",

keywords = "Conductivity, Fullerenes and derivatives, Transport measurements",

author = "Jhang, {S. H.} and Kim, {G. T.} and Lee, {S. W.} and Park, {Y. W.} and P. Bernier",

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T1 - Negative differential resistance in single-wall carbon nanotube network

AU - Jhang, S. H.

AU - Kim, G. T.

AU - Lee, S. W.

AU - Park, Y. W.

AU - Bernier, P.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.

AB - The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.

KW - Conductivity

KW - Fullerenes and derivatives

KW - Transport measurements

UR - http://www.scopus.com/inward/record.url?scp=0035867710&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(00)01013-4

DO - 10.1016/S0379-6779(00)01013-4

M3 - Article

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SN - 0379-6779

VL - 121

SP - 1243

EP - 1244

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

ER -

Negative differential resistance in single-wall carbon nanotube network

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Keywords

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