Near infrared organic photodetector utilizing a double electron blocking layer

Shafidah Shafian; Heewon Hwang; Kyungkon Kim

doi:10.1364/OE.24.025308

Near infrared organic photodetector utilizing a double electron blocking layer

Shafidah Shafian, Heewon Hwang, Kyungkon Kim

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO₃) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 × 10⁴ at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 × 10³) and three orders of magnitude higher than that of MoO₃ single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 × 10¹¹ Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO₃ single EBL.

Original language	English
Pages (from-to)	25308-25316
Number of pages	9
Journal	Optics Express
Volume	24
Issue number	22
DOIs	https://doi.org/10.1364/OE.24.025308
State	Published - 31 Oct 2016

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© 2016 Optical Society of America.

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title = "Near infrared organic photodetector utilizing a double electron blocking layer",

abstract = "A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 × 104 at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 × 103) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 × 1011 Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL.",

author = "Shafidah Shafian and Heewon Hwang and Kyungkon Kim",

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year = "2016",

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doi = "10.1364/OE.24.025308",

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T1 - Near infrared organic photodetector utilizing a double electron blocking layer

AU - Shafian, Shafidah

AU - Hwang, Heewon

AU - Kim, Kyungkon

PY - 2016/10/31

Y1 - 2016/10/31

N2 - A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 × 104 at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 × 103) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 × 1011 Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL.

AB - A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 × 104 at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 × 103) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 × 1011 Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL.

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JO - Optics Express

JF - Optics Express

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ER -

Near infrared organic photodetector utilizing a double electron blocking layer

Abstract

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