A near infrared organic photodiode (OPD) utilizing a double electron blocking layer (EBL) fabricated by the sequential deposition of molybdenum (VI) oxide (MoO3) and poly(3,4ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) is reported. The double EBL improves the on/off current ratio of OPD up to 1.36 × 104 at -1V, which is one order of magnitude higher than PEDOT:PSS single EBL (2.45 × 103) and three orders of magnitude higher than that of MoO3 single EBL (7.86). The detectivity at near infrared (800 nm) at -1V is 4.90 × 1011 Jones, which is 2.83 times higher than the PEDOT:PSS single EBL and 2 magnitudes higher compared to the MoO3 single EBL.
Bibliographical noteFunding Information:
National Research Foundation of Korea (NRF) (NRF-2015M1A2A2057506); Ministry of Trade, Industry and Energy, Republic of Korea (No. 20123010010140, 20133030011330 and 20133030000210). We thank Dr. Kris Rathwell for the valuable discussions.
© 2016 Optical Society of America.