Nanosculpture: Three-dimensional CMOS device structures for the ULSI era

Engineering

• Device Structure 100%
• Limitations 50%
• Floating Gate 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Silicon-Oxide-Nitride-Oxide-Silicon 50%
• Flash Memory 50%
• Tunnel Construction 50%

Material Science

• Oxide Compound 100%
• Density 50%
• Capacitor 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Nitride Compound 50%