Nanoscale resistive switching schottky contacts on self-assembled Pt nanodots on SrTiO3

Hyunsoo Lee; Haeri Kim; Trong Nghia Van; Dong Wook Kim; Jeong Young Park

doi:10.1021/am4032086

Nanoscale resistive switching schottky contacts on self-assembled Pt nanodots on SrTiO₃

Hyunsoo Lee, Haeri Kim, Trong Nghia Van, Dong Wook Kim, Jeong Young Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A nanoscale Schottky diode using Pt nanodisks on a Nb-doped SrTiO ₃ (Nb:STO) single crystal was fabricated, and resistive switching (RS) was demonstrated with conductive atomic force microscopy at ultrahigh vacuum. Pt disks with diameters on the order of 10 nm were formed using colloidal self-assembled patterns of silica nanospheres, followed by evaporation of the Pt layers on the Nb:STO single crystal. Here we show that the reproducible bipolar RS behavior of the nanoscale Pt/Nb:STO Schottky junction was achieved by utilizing local current-voltage spectroscopy. The conductance images, obtained simultaneously with topographic images, show the homogeneous current distribution of selected triangular-shaped Pt nanodisks during repetitive resistive switching between the high-resistance state (HRS) and low-resistance state (LRS). The endurance characteristics of the Pt/Nb:STO junction exhibit reliable switching behavior. These results suggest that the rectifying and resistive Pt/Nb:STO junction can be scaled down to the 10 nm range and their position can be controlled.

Original language	English
Pages (from-to)	11668-11672
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	22
DOIs	https://doi.org/10.1021/am4032086
State	Published - 27 Nov 2013

Keywords

conductive atomic force microscopy
Pt/Nb-doped SrTiO single crystal
scaling down
Schottky junction
spatial mapping

Access to Document

10.1021/am4032086

Cite this

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title = "Nanoscale resistive switching schottky contacts on self-assembled Pt nanodots on SrTiO3",

abstract = "A nanoscale Schottky diode using Pt nanodisks on a Nb-doped SrTiO 3 (Nb:STO) single crystal was fabricated, and resistive switching (RS) was demonstrated with conductive atomic force microscopy at ultrahigh vacuum. Pt disks with diameters on the order of 10 nm were formed using colloidal self-assembled patterns of silica nanospheres, followed by evaporation of the Pt layers on the Nb:STO single crystal. Here we show that the reproducible bipolar RS behavior of the nanoscale Pt/Nb:STO Schottky junction was achieved by utilizing local current-voltage spectroscopy. The conductance images, obtained simultaneously with topographic images, show the homogeneous current distribution of selected triangular-shaped Pt nanodisks during repetitive resistive switching between the high-resistance state (HRS) and low-resistance state (LRS). The endurance characteristics of the Pt/Nb:STO junction exhibit reliable switching behavior. These results suggest that the rectifying and resistive Pt/Nb:STO junction can be scaled down to the 10 nm range and their position can be controlled.",

keywords = "conductive atomic force microscopy, Pt/Nb-doped SrTiO single crystal, scaling down, Schottky junction, spatial mapping",

author = "Hyunsoo Lee and Haeri Kim and Van, {Trong Nghia} and Kim, {Dong Wook} and Park, {Jeong Young}",

year = "2013",

month = nov,

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T1 - Nanoscale resistive switching schottky contacts on self-assembled Pt nanodots on SrTiO3

AU - Lee, Hyunsoo

AU - Kim, Haeri

AU - Van, Trong Nghia

AU - Kim, Dong Wook

AU - Park, Jeong Young

PY - 2013/11/27

Y1 - 2013/11/27

N2 - A nanoscale Schottky diode using Pt nanodisks on a Nb-doped SrTiO 3 (Nb:STO) single crystal was fabricated, and resistive switching (RS) was demonstrated with conductive atomic force microscopy at ultrahigh vacuum. Pt disks with diameters on the order of 10 nm were formed using colloidal self-assembled patterns of silica nanospheres, followed by evaporation of the Pt layers on the Nb:STO single crystal. Here we show that the reproducible bipolar RS behavior of the nanoscale Pt/Nb:STO Schottky junction was achieved by utilizing local current-voltage spectroscopy. The conductance images, obtained simultaneously with topographic images, show the homogeneous current distribution of selected triangular-shaped Pt nanodisks during repetitive resistive switching between the high-resistance state (HRS) and low-resistance state (LRS). The endurance characteristics of the Pt/Nb:STO junction exhibit reliable switching behavior. These results suggest that the rectifying and resistive Pt/Nb:STO junction can be scaled down to the 10 nm range and their position can be controlled.

AB - A nanoscale Schottky diode using Pt nanodisks on a Nb-doped SrTiO 3 (Nb:STO) single crystal was fabricated, and resistive switching (RS) was demonstrated with conductive atomic force microscopy at ultrahigh vacuum. Pt disks with diameters on the order of 10 nm were formed using colloidal self-assembled patterns of silica nanospheres, followed by evaporation of the Pt layers on the Nb:STO single crystal. Here we show that the reproducible bipolar RS behavior of the nanoscale Pt/Nb:STO Schottky junction was achieved by utilizing local current-voltage spectroscopy. The conductance images, obtained simultaneously with topographic images, show the homogeneous current distribution of selected triangular-shaped Pt nanodisks during repetitive resistive switching between the high-resistance state (HRS) and low-resistance state (LRS). The endurance characteristics of the Pt/Nb:STO junction exhibit reliable switching behavior. These results suggest that the rectifying and resistive Pt/Nb:STO junction can be scaled down to the 10 nm range and their position can be controlled.

KW - conductive atomic force microscopy

KW - Pt/Nb-doped SrTiO single crystal

KW - scaling down

KW - Schottky junction

KW - spatial mapping

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