Nanoscale observation of surface potential and carrier transport in cu2znsn(s,se)4 thin films grown by sputtering-based two-step process

Gee Yeong Kim; Ju Ri Kim; William Jo; Dae Ho Son; Dae Hwan Kim; Jin Kyu Kang

doi:10.1186/1556-276X-9-10

Nanoscale observation of surface potential and carrier transport in cu2znsn(s,se)4 thin films grown by sputtering-based two-step process

Gee Yeong Kim, Ju Ri Kim, William Jo, Dae Ho Son, Dae Hwan Kim, Jin Kyu Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)₄ (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se₂.

Original language	English
Article number	10
Pages (from-to)	1-5
Number of pages	5
Journal	Nanoscale Research Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-9-10
State	Published - 2014

Bibliographical note

Funding Information:
This work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry, and Energy (No. 20123010010130).

Keywords

Conductive atomic force microscopy
Cu(in
Kelvin probe force microscopy
Kesterite

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10.1186/1556-276X-9-10

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title = "Nanoscale observation of surface potential and carrier transport in cu2znsn(s,se)4 thin films grown by sputtering-based two-step process",

abstract = "Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.",

keywords = "Conductive atomic force microscopy, Cu(in, Kelvin probe force microscopy, Kesterite",

author = "Kim, {Gee Yeong} and Kim, {Ju Ri} and William Jo and Son, {Dae Ho} and Kim, {Dae Hwan} and Kang, {Jin Kyu}",

note = "Funding Information: This work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry, and Energy (No. 20123010010130).",

year = "2014",

doi = "10.1186/1556-276X-9-10",

language = "English",

volume = "9",

pages = "1--5",

journal = "Nanoscale Research Letters",

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T1 - Nanoscale observation of surface potential and carrier transport in cu2znsn(s,se)4 thin films grown by sputtering-based two-step process

AU - Kim, Gee Yeong

AU - Kim, Ju Ri

AU - Jo, William

AU - Son, Dae Ho

AU - Kim, Dae Hwan

AU - Kang, Jin Kyu

N1 - Funding Information: This work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry, and Energy (No. 20123010010130).

PY - 2014

Y1 - 2014

N2 - Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.

AB - Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu2ZnSn(S,Se)4 (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se2.

KW - Conductive atomic force microscopy

KW - Cu(in

KW - Kelvin probe force microscopy

KW - Kesterite

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U2 - 10.1186/1556-276X-9-10

DO - 10.1186/1556-276X-9-10

M3 - Article

AN - SCOPUS:84892497386

SN - 1931-7573

VL - 9

SP - 1

EP - 5

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 10

ER -

Nanoscale observation of surface potential and carrier transport in cu2znsn(s,se)4 thin films grown by sputtering-based two-step process

Abstract

Bibliographical note

Keywords

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