We have studied a 1 : 1 electron-beam projection lithography method using an electron emission mask (EEM). The method is applicable to printing nanoscale patterns by using very short exposure below 10 seconds. The design and the characteristics of the EEM fabricated with a metal-insulator-metal (MIM) structure are discussed. The I-V characteristics of EEM show that the optimal thickness of the insulator layer of MIM structure is 12 nm, and the electron-beam resist developed by using a 1 : 1 projection of EEM shows patterns with 100-nm linewidths.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|State||Published - May 2006|
- Electron emission mask
- Electron-beam lithography