Nanocrystalline graphite growth on sapphire by carbon molecular beam epitaxy

S. K. Jerng; D. S. Yu; Y. S. Kim; Junga Ryou; Suklyun Hong; C. Kim; S. Yoon; D. K. Efetov; P. Kim; S. H. Chun

doi:10.1021/jp110650d

Nanocrystalline graphite growth on sapphire by carbon molecular beam epitaxy

S. K. Jerng, D. S. Yu, Y. S. Kim, Junga Ryou, Suklyun Hong, C. Kim, S. Yoon, D. K. Efetov, P. Kim, S. H. Chun

Department of Physics

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115 Scopus citations

Abstract

We report the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy. Raman spectra show a systematic change from amorphous carbon to nanocrystalline graphite with a cluster diameter of several nanometers, depending on the growth temperature. The symmetry of the substrate seems to have little effect on the film quality. Simulations suggest that the strong bonding between carbon and oxygen may lead to orientational disorders. Transport measurements show a Dirac-like peak and a carrier type change by the gate voltage.

Original language	English
Pages (from-to)	4491-4494
Number of pages	4
Journal	Journal of Physical Chemistry C
Volume	115
Issue number	11
DOIs	https://doi.org/10.1021/jp110650d
State	Published - 24 Mar 2011

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title = "Nanocrystalline graphite growth on sapphire by carbon molecular beam epitaxy",

abstract = "We report the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy. Raman spectra show a systematic change from amorphous carbon to nanocrystalline graphite with a cluster diameter of several nanometers, depending on the growth temperature. The symmetry of the substrate seems to have little effect on the film quality. Simulations suggest that the strong bonding between carbon and oxygen may lead to orientational disorders. Transport measurements show a Dirac-like peak and a carrier type change by the gate voltage.",

author = "Jerng, {S. K.} and Yu, {D. S.} and Kim, {Y. S.} and Junga Ryou and Suklyun Hong and C. Kim and S. Yoon and Efetov, {D. K.} and P. Kim and Chun, {S. H.}",

year = "2011",

month = mar,

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doi = "10.1021/jp110650d",

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AU - Jerng, S. K.

AU - Yu, D. S.

AU - Kim, Y. S.

AU - Ryou, Junga

AU - Hong, Suklyun

AU - Kim, C.

AU - Yoon, S.

AU - Efetov, D. K.

AU - Kim, P.

AU - Chun, S. H.

PY - 2011/3/24

Y1 - 2011/3/24

N2 - We report the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy. Raman spectra show a systematic change from amorphous carbon to nanocrystalline graphite with a cluster diameter of several nanometers, depending on the growth temperature. The symmetry of the substrate seems to have little effect on the film quality. Simulations suggest that the strong bonding between carbon and oxygen may lead to orientational disorders. Transport measurements show a Dirac-like peak and a carrier type change by the gate voltage.

AB - We report the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy. Raman spectra show a systematic change from amorphous carbon to nanocrystalline graphite with a cluster diameter of several nanometers, depending on the growth temperature. The symmetry of the substrate seems to have little effect on the film quality. Simulations suggest that the strong bonding between carbon and oxygen may lead to orientational disorders. Transport measurements show a Dirac-like peak and a carrier type change by the gate voltage.

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DO - 10.1021/jp110650d

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SP - 4491

EP - 4494

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 11

ER -

Nanocrystalline graphite growth on sapphire by carbon molecular beam epitaxy

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