Nano-scale observation of charge transport and potential distribution of photovoltaic Cu(In,Ga)Se 2 thin-films

A. R. Jeong; W. Jo; H. J. Jo; D. H. Kim; S. J. Sung; J. K. Kang; D. H. Lee; D. H. Nam; D. Y. Park; H. Cheong

doi:10.1109/NMDC.2011.6155335

Nano-scale observation of charge transport and potential distribution of photovoltaic Cu(In,Ga)Se ₂ thin-films

A. R. Jeong
, W. Jo
, H. J. Jo
, D. H. Kim
, S. J. Sung
, J. K. Kang
, D. H. Lee
, D. H. Nam
, D. Y. Park
, H. Cheong

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Understanding of grain boundary (GB) is critical for photovoltaic applications since electron-hole recombination at GBs determines the conversion efficiency. However, our local electrical and optical analysis shows positive potential at GBs in Cu(In,Ga)Se ₂ (CIGS), which suppresses the recombination at GBs. We report on a direct measurement of potential distribution and local electrical transport on the surface of photovoltaic CIGS using a nano-scale electrical characterization of Kelvin probe microscopy and conductive atomic force microscopy. This reveals that the positively charged surface potential at GB is expected to increase the minority carrier collection and the enhanced current at GB leads to large carrier mobility and electron-hole separation at the GBs. Micro-Raman scattering results helps to analyze electrical behavior from defect analysis.

Original language	English
Title of host publication	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages	184-185
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2011.6155335
State	Published - 2011
Event	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of Duration: 18 Oct 2011 → 21 Oct 2011

Publication series

Name	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Conference

Conference	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Country/Territory	Korea, Republic of
City	Jeju
Period	18/10/11 → 21/10/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/NMDC.2011.6155335

Cite this

Jeong, A. R., Jo, W., Jo, H. J., Kim, D. H., Sung, S. J., Kang, J. K., Lee, D. H., Nam, D. H., Park, D. Y., & Cheong, H. (2011). Nano-scale observation of charge transport and potential distribution of photovoltaic Cu(In,Ga)Se ₂ thin-films. In 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 (pp. 184-185). Article 6155335 (2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011). https://doi.org/10.1109/NMDC.2011.6155335

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title = "Nano-scale observation of charge transport and potential distribution of photovoltaic Cu(In,Ga)Se 2 thin-films",

abstract = "Understanding of grain boundary (GB) is critical for photovoltaic applications since electron-hole recombination at GBs determines the conversion efficiency. However, our local electrical and optical analysis shows positive potential at GBs in Cu(In,Ga)Se 2 (CIGS), which suppresses the recombination at GBs. We report on a direct measurement of potential distribution and local electrical transport on the surface of photovoltaic CIGS using a nano-scale electrical characterization of Kelvin probe microscopy and conductive atomic force microscopy. This reveals that the positively charged surface potential at GB is expected to increase the minority carrier collection and the enhanced current at GB leads to large carrier mobility and electron-hole separation at the GBs. Micro-Raman scattering results helps to analyze electrical behavior from defect analysis.",

author = "Jeong, \{A. R.\} and W. Jo and Jo, \{H. J.\} and Kim, \{D. H.\} and Sung, \{S. J.\} and Kang, \{J. K.\} and Lee, \{D. H.\} and Nam, \{D. H.\} and Park, \{D. Y.\} and H. Cheong",

year = "2011",

doi = "10.1109/NMDC.2011.6155335",

language = "English",

isbn = "9781457721397",

series = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011",

pages = "184--185",

booktitle = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011",

note = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 ; Conference date: 18-10-2011 Through 21-10-2011",

}

Jeong, AR, Jo, W, Jo, HJ, Kim, DH, Sung, SJ, Kang, JK, Lee, DH, Nam, DH, Park, DY & Cheong, H 2011, Nano-scale observation of charge transport and potential distribution of photovoltaic Cu(In,Ga)Se ₂ thin-films. in 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011., 6155335, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, pp. 184-185, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, Jeju, Korea, Republic of, 18/10/11. https://doi.org/10.1109/NMDC.2011.6155335

Nano-scale observation of charge transport and potential distribution of photovoltaic Cu(In,Ga)Se ₂ thin-films. / Jeong, A. R.; Jo, W.; Jo, H. J. et al.
2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011. 2011. p. 184-185 6155335 (2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jeong, A. R.

AU - Jo, W.

AU - Jo, H. J.

AU - Kim, D. H.

AU - Sung, S. J.

AU - Kang, J. K.

AU - Lee, D. H.

AU - Nam, D. H.

AU - Park, D. Y.

AU - Cheong, H.

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AB - Understanding of grain boundary (GB) is critical for photovoltaic applications since electron-hole recombination at GBs determines the conversion efficiency. However, our local electrical and optical analysis shows positive potential at GBs in Cu(In,Ga)Se 2 (CIGS), which suppresses the recombination at GBs. We report on a direct measurement of potential distribution and local electrical transport on the surface of photovoltaic CIGS using a nano-scale electrical characterization of Kelvin probe microscopy and conductive atomic force microscopy. This reveals that the positively charged surface potential at GB is expected to increase the minority carrier collection and the enhanced current at GB leads to large carrier mobility and electron-hole separation at the GBs. Micro-Raman scattering results helps to analyze electrical behavior from defect analysis.

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T3 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

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BT - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

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