Nano-cone resistive memory for ultralow power operation

Sungjun Kim, Sunghun Jung, Min Hwi Kim, Tae Hyeon Kim, Suhyun Bang, Seongjae Cho, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

SiNx-based nano-structure resistive memory is fabricated by fully silicon CMOS compatible process integration including particularly designed anisotropic etching for the construction of a nano-cone silicon bottom electrode (BE). Bipolar resistive switching characteristics have significantly reduced switching current and voltage and are demonstrated in a nano-cone BE structure, as compared with those in a flat BE one. We have verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE. The greatly improved nonlinearity of the nano-cone resistive memory cell will be beneficial in the ultra-high-density crossbar array.

Original languageEnglish
Article number125207
JournalNanotechnology
Volume28
Issue number12
DOIs
StatePublished - 23 Feb 2017

Bibliographical note

Funding Information:
This work was supported by National Research Foundation of Korea (NRF) funded by the Korean Ministry of Science, ICT and Future Planning (MSIP) with Grant No. 2015R1A2A1A01007307.

Publisher Copyright:
© 2017 IOP Publishing Ltd.

Keywords

  • low-power
  • nano-cone
  • resistive switching
  • silicon nitride

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