N-type graphene induced by dissociative H2 adsorption at room temperature

Byung Hoon Kim; Sung Ju Hong; Seung Jae Baek; Hu Young Jeong; Noejung Park; Muyoung Lee; Sang Wook Lee; Min Park; Seung Wan Chu; Hyeon Suk Shin; Jeongmin Lim; Jeong Chul Lee; Yongseok Jun; Yung Woo Park

doi:10.1038/srep00690

N-type graphene induced by dissociative H₂ adsorption at room temperature

Byung Hoon Kim, Sung Ju Hong, Seung Jae Baek, Hu Young Jeong, Noejung Park, Muyoung Lee, Sang Wook Lee, Min Park, Seung Wan Chu, Hyeon Suk Shin, Jeongmin Lim, Jeong Chul Lee, Yongseok Jun, Yung Woo Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H₂ gas pressure up to 24 bar from 300 K to 345 K. Upon H₂ exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H₂ adsorption due to the existence of vacancy defects on graphene.

Original language	English
Article number	690
Journal	Scientific Reports
Volume	2
DOIs	https://doi.org/10.1038/srep00690
State	Published - 2012

Bibliographical note

Funding Information:
We thank K. S. Novoselov, P. Kim, and C. N. R. Rao for helpful discussions and comments and H.J. Kim for supporting the manufacture of the high-pressure chamber. N.P. was supported by the Hydrogen Energy R&D Center, a 21st Century Frontier R&D Program funded by the Ministry of Science and Technology of Korea. Y.W.P. acknowledges support from the GRDC (2009-00514) through the Ministry of Education, Science and Technology (MEST), Korea. S.W.L. acknowledges support from the WCU program of the MEST (R31-2008-000-10057-0) and from the NRF (2011-0021207). Y. J. acknowledges support from MEST (20120002424, 2012K001288).

Access to Document

10.1038/srep00690

Cite this

@article{114d695bdc7d42ca8f2ea37913a60c16,

title = "N-type graphene induced by dissociative H2 adsorption at room temperature",

abstract = "Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H2 gas pressure up to 24 bar from 300 K to 345 K. Upon H2 exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H2 adsorption due to the existence of vacancy defects on graphene.",

author = "Kim, {Byung Hoon} and Hong, {Sung Ju} and Baek, {Seung Jae} and Jeong, {Hu Young} and Noejung Park and Muyoung Lee and Lee, {Sang Wook} and Min Park and Chu, {Seung Wan} and Shin, {Hyeon Suk} and Jeongmin Lim and Lee, {Jeong Chul} and Yongseok Jun and Park, {Yung Woo}",

note = "Funding Information: We thank K. S. Novoselov, P. Kim, and C. N. R. Rao for helpful discussions and comments and H.J. Kim for supporting the manufacture of the high-pressure chamber. N.P. was supported by the Hydrogen Energy R&D Center, a 21st Century Frontier R&D Program funded by the Ministry of Science and Technology of Korea. Y.W.P. acknowledges support from the GRDC (2009-00514) through the Ministry of Education, Science and Technology (MEST), Korea. S.W.L. acknowledges support from the WCU program of the MEST (R31-2008-000-10057-0) and from the NRF (2011-0021207). Y. J. acknowledges support from MEST (20120002424, 2012K001288).",

year = "2012",

doi = "10.1038/srep00690",

language = "English",

volume = "2",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - N-type graphene induced by dissociative H2 adsorption at room temperature

AU - Kim, Byung Hoon

AU - Hong, Sung Ju

AU - Baek, Seung Jae

AU - Jeong, Hu Young

AU - Park, Noejung

AU - Lee, Muyoung

AU - Lee, Sang Wook

AU - Park, Min

AU - Chu, Seung Wan

AU - Shin, Hyeon Suk

AU - Lim, Jeongmin

AU - Lee, Jeong Chul

AU - Jun, Yongseok

AU - Park, Yung Woo

N1 - Funding Information: We thank K. S. Novoselov, P. Kim, and C. N. R. Rao for helpful discussions and comments and H.J. Kim for supporting the manufacture of the high-pressure chamber. N.P. was supported by the Hydrogen Energy R&D Center, a 21st Century Frontier R&D Program funded by the Ministry of Science and Technology of Korea. Y.W.P. acknowledges support from the GRDC (2009-00514) through the Ministry of Education, Science and Technology (MEST), Korea. S.W.L. acknowledges support from the WCU program of the MEST (R31-2008-000-10057-0) and from the NRF (2011-0021207). Y. J. acknowledges support from MEST (20120002424, 2012K001288).

PY - 2012

Y1 - 2012

N2 - Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H2 gas pressure up to 24 bar from 300 K to 345 K. Upon H2 exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H2 adsorption due to the existence of vacancy defects on graphene.

AB - Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H2 gas pressure up to 24 bar from 300 K to 345 K. Upon H2 exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H2 adsorption due to the existence of vacancy defects on graphene.

UR - http://www.scopus.com/inward/record.url?scp=84867006832&partnerID=8YFLogxK

U2 - 10.1038/srep00690

DO - 10.1038/srep00690

M3 - Article

AN - SCOPUS:84867006832

SN - 2045-2322

VL - 2

JO - Scientific Reports

JF - Scientific Reports

M1 - 690

ER -