N-type graphene induced by dissociative H2 adsorption at room temperature

Byung Hoon Kim, Sung Ju Hong, Seung Jae Baek, Hu Young Jeong, Noejung Park, Muyoung Lee, Sang Wook Lee, Min Park, Seung Wan Chu, Hyeon Suk Shin, Jeongmin Lim, Jeong Chul Lee, Yongseok Jun, Yung Woo Park

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Studies of the interaction between hydrogen and graphene have been increasingly required due to the indispensable modulation of the electronic structure of graphene for device applications and the possibility of using graphene as a hydrogen storage material. Here, we report on the behaviour of molecular hydrogen on graphene using the gate voltage-dependent resistance of single-, bi-, and multi-layer graphene sheets as a function of H2 gas pressure up to 24 bar from 300 K to 345 K. Upon H2 exposure, the charge neutrality point shifts toward the negative gate voltage region, indicating n-type doping, and distinct Raman signature changes, increases in the interlayer distance of multi-layer graphene, and a decrease in the d-spacing occur, as determined by TEM. These results demonstrate the occurrence of dissociative H2 adsorption due to the existence of vacancy defects on graphene.

Original languageEnglish
Article number690
JournalScientific Reports
StatePublished - 2012

Bibliographical note

Funding Information:
We thank K. S. Novoselov, P. Kim, and C. N. R. Rao for helpful discussions and comments and H.J. Kim for supporting the manufacture of the high-pressure chamber. N.P. was supported by the Hydrogen Energy R&D Center, a 21st Century Frontier R&D Program funded by the Ministry of Science and Technology of Korea. Y.W.P. acknowledges support from the GRDC (2009-00514) through the Ministry of Education, Science and Technology (MEST), Korea. S.W.L. acknowledges support from the WCU program of the MEST (R31-2008-000-10057-0) and from the NRF (2011-0021207). Y. J. acknowledges support from MEST (20120002424, 2012K001288).


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