Multiple-gate CMOS thin-film transistor with polysilicon nanowire

Maesoon Im; Jin-Woo Han; Hyunjin Lee; Lee-Eun Yu; Sungho Kim; Chang-Hoon Kim; Sang Cheol Jeon; Kwang Hee Kim; Gi Sung Lee; Jae Sub Oh

Multiple-gate CMOS thin-film transistor with polysilicon nanowire

Maesoon Im, Jin-Woo Han, Hyunjin Lee, Lee-Eun Yu, Sungho Kim, Chang-Hoon Kim, Sang Cheol Jeon, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	102-105
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	1
State	Published - 2007

Cite this

@article{a6f832e2dca8452398a6ee957e94dcb9,

title = "Multiple-gate CMOS thin-film transistor with polysilicon nanowire",

author = "Maesoon Im and Jin-Woo Han and Hyunjin Lee and Lee-Eun Yu and Sungho Kim and Chang-Hoon Kim and Jeon, \{Sang Cheol\} and Kim, \{Kwang Hee\} and Lee, \{Gi Sung\} and Oh, \{Jae Sub\}",

year = "2007",

language = "English",

volume = "29",

pages = "102--105",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Multiple-gate CMOS thin-film transistor with polysilicon nanowire

AU - Im, Maesoon

AU - Han, Jin-Woo

AU - Lee, Hyunjin

AU - Yu, Lee-Eun

AU - Kim, Sungho

AU - Kim, Chang-Hoon

AU - Jeon, Sang Cheol

AU - Kim, Kwang Hee

AU - Lee, Gi Sung

AU - Oh, Jae Sub

PY - 2007

Y1 - 2007

M3 - Article

SN - 0741-3106

VL - 29

SP - 102

EP - 105

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -