Multilevel switching characteristics of Si3N4-based nano-wedge resistive switching memory and array simulation for in-memory computing application
- Dong Keun Lee
- , Min Hwi Kim
- , Suhyun Bang
- , Tae Hyeon Kim
- , Sungjun Kim
- , Seongjae Cho
- , Byung Gook Park
Research output: Contribution to journal › Article › peer-review
5
Scopus
citations