Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide

Jun Hyuk Seo; Ji Young Kim; Young Bae Kim; Dong Wook Kim; Haeri Kim; Hyun Cho; Duck Kyun Choi

doi:10.1016/j.microrel.2012.12.008

Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide

Jun Hyuk Seo, Ji Young Kim, Young Bae Kim, Dong Wook Kim, Haeri Kim, Hyun Cho, Duck Kyun Choi

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A non-volatile nanocrystal floating gate MOS capacitor with multi-level function is achieved by engineering the electric field within the tunneling oxide via a stepped control oxide. A MOS capacitor containing Au nanocrystals in a stepped HfO₂ and SiO₂ tunneling oxide matrix was fabricated in order to demonstrate this concept. The flatband voltage shift, measured from the C-V hysteresis curves, exhibited a saturated region within a programming mode that is not observed in the conventional step free MOS capacitor. The values of the flatband voltage shift measured at the first and second saturation were slightly higher than the values predicted from the Coulomb blockade theory. However, there is a strong consensus with the flatband voltage ratios between experimental results and the predicted values, which supports successful operation. More obvious evidence of multi-level storage function was confirmed by turnaround voltage measurement.

Original language	English
Pages (from-to)	528-532
Number of pages	5
Journal	Microelectronics Reliability
Volume	53
Issue number	4
DOIs	https://doi.org/10.1016/j.microrel.2012.12.008
State	Published - Apr 2013

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2010-0014618).

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10.1016/j.microrel.2012.12.008

Cite this

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title = "Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide",

abstract = "A non-volatile nanocrystal floating gate MOS capacitor with multi-level function is achieved by engineering the electric field within the tunneling oxide via a stepped control oxide. A MOS capacitor containing Au nanocrystals in a stepped HfO2 and SiO2 tunneling oxide matrix was fabricated in order to demonstrate this concept. The flatband voltage shift, measured from the C-V hysteresis curves, exhibited a saturated region within a programming mode that is not observed in the conventional step free MOS capacitor. The values of the flatband voltage shift measured at the first and second saturation were slightly higher than the values predicted from the Coulomb blockade theory. However, there is a strong consensus with the flatband voltage ratios between experimental results and the predicted values, which supports successful operation. More obvious evidence of multi-level storage function was confirmed by turnaround voltage measurement.",

author = "Seo, {Jun Hyuk} and Kim, {Ji Young} and Kim, {Young Bae} and Kim, {Dong Wook} and Haeri Kim and Hyun Cho and Choi, {Duck Kyun}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2010-0014618).",

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doi = "10.1016/j.microrel.2012.12.008",

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AU - Kim, Ji Young

AU - Kim, Young Bae

AU - Kim, Dong Wook

AU - Kim, Haeri

AU - Cho, Hyun

AU - Choi, Duck Kyun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2010-0014618).

PY - 2013/4

Y1 - 2013/4

N2 - A non-volatile nanocrystal floating gate MOS capacitor with multi-level function is achieved by engineering the electric field within the tunneling oxide via a stepped control oxide. A MOS capacitor containing Au nanocrystals in a stepped HfO2 and SiO2 tunneling oxide matrix was fabricated in order to demonstrate this concept. The flatband voltage shift, measured from the C-V hysteresis curves, exhibited a saturated region within a programming mode that is not observed in the conventional step free MOS capacitor. The values of the flatband voltage shift measured at the first and second saturation were slightly higher than the values predicted from the Coulomb blockade theory. However, there is a strong consensus with the flatband voltage ratios between experimental results and the predicted values, which supports successful operation. More obvious evidence of multi-level storage function was confirmed by turnaround voltage measurement.

AB - A non-volatile nanocrystal floating gate MOS capacitor with multi-level function is achieved by engineering the electric field within the tunneling oxide via a stepped control oxide. A MOS capacitor containing Au nanocrystals in a stepped HfO2 and SiO2 tunneling oxide matrix was fabricated in order to demonstrate this concept. The flatband voltage shift, measured from the C-V hysteresis curves, exhibited a saturated region within a programming mode that is not observed in the conventional step free MOS capacitor. The values of the flatband voltage shift measured at the first and second saturation were slightly higher than the values predicted from the Coulomb blockade theory. However, there is a strong consensus with the flatband voltage ratios between experimental results and the predicted values, which supports successful operation. More obvious evidence of multi-level storage function was confirmed by turnaround voltage measurement.

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Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide

Abstract

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