Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide

Jun Hyuk Seo, Ji Young Kim, Young Bae Kim, Dong Wook Kim, Haeri Kim, Hyun Cho, Duck Kyun Choi

Research output: Contribution to journalArticlepeer-review


A non-volatile nanocrystal floating gate MOS capacitor with multi-level function is achieved by engineering the electric field within the tunneling oxide via a stepped control oxide. A MOS capacitor containing Au nanocrystals in a stepped HfO2 and SiO2 tunneling oxide matrix was fabricated in order to demonstrate this concept. The flatband voltage shift, measured from the C-V hysteresis curves, exhibited a saturated region within a programming mode that is not observed in the conventional step free MOS capacitor. The values of the flatband voltage shift measured at the first and second saturation were slightly higher than the values predicted from the Coulomb blockade theory. However, there is a strong consensus with the flatband voltage ratios between experimental results and the predicted values, which supports successful operation. More obvious evidence of multi-level storage function was confirmed by turnaround voltage measurement.

Original languageEnglish
Pages (from-to)528-532
Number of pages5
JournalMicroelectronics Reliability
Issue number4
StatePublished - Apr 2013

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (No. 2010-0014618).


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