Multi-layered nanocomposite dielectrics for high density organic memory devices

Moonyeong Kang; Kyungwha Chung; Kang Jun Baeg; Dong Ha Kim; Choongik Kim

doi:10.1063/1.4907320

Multi-layered nanocomposite dielectrics for high density organic memory devices

Moonyeong Kang, Kyungwha Chung, Kang Jun Baeg, Dong Ha Kim, Choongik Kim

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (ΔV_th).

Original language	English
Article number	043302
Journal	Applied Physics Letters
Volume	106
Issue number	4
DOIs	https://doi.org/10.1063/1.4907320
State	Published - 26 Jan 2015

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© 2015 AIP Publishing LLC.

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abstract = "We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (ΔVth).",

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AU - Chung, Kyungwha

AU - Baeg, Kang Jun

AU - Kim, Dong Ha

AU - Kim, Choongik

PY - 2015/1/26

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N2 - We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (ΔVth).

AB - We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (ΔVth).

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Multi-layered nanocomposite dielectrics for high density organic memory devices

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