@inproceedings{7e30f3adb99d46a9820dd23479d005a9,
title = "Multi-functional universal device using a band-engineered vertical structure",
abstract = "A multi-functional universal device based on a vertical channel is demonstrated as a total device solution. Four different operation modes: conventional MOSFET, steep slope FET, multi-faceted volatile memory (1T-DRAM and 1T-SRAM), and non-volatile memory are implemented in a single transistor. The steep slope FET and volatile memory are boosted by a vertically inhomogeneous doped channel for spatial energyband-engineering, and non-volatile memory capable of high performance and reliable operation is obtained via tunneling bandgap-engineering.",
author = "Moon, \{Dong Il\} and Oh, \{Jae Sub\} and Choi, \{Sung Jin\} and Sungho Kim and Kim, \{Jee Yeon\} and Kim, \{Moon Seok\} and Kim, \{Young Su\} and Kang, \{Min Ho\} and Kim, \{Jeoung Woo\} and Choi, \{Yang Kyu\}",
year = "2011",
doi = "10.1109/IEDM.2011.6131607",
language = "English",
isbn = "9781457705052",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "24.6.1--24.6.4",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",
note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",
}