@inproceedings{7e30f3adb99d46a9820dd23479d005a9,
title = "Multi-functional universal device using a band-engineered vertical structure",
abstract = "A multi-functional universal device based on a vertical channel is demonstrated as a total device solution. Four different operation modes: conventional MOSFET, steep slope FET, multi-faceted volatile memory (1T-DRAM and 1T-SRAM), and non-volatile memory are implemented in a single transistor. The steep slope FET and volatile memory are boosted by a vertically inhomogeneous doped channel for spatial energyband-engineering, and non-volatile memory capable of high performance and reliable operation is obtained via tunneling bandgap-engineering.",
author = "Moon, {Dong Il} and Oh, {Jae Sub} and Choi, {Sung Jin} and Sungho Kim and Kim, {Jee Yeon} and Kim, {Moon Seok} and Kim, {Young Su} and Kang, {Min Ho} and Kim, {Jeoung Woo} and Choi, {Yang Kyu}",
year = "2011",
doi = "10.1109/IEDM.2011.6131607",
language = "English",
isbn = "9781457705052",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "24.6.1--24.6.4",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",
note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",
}