MOSFET Drain Engineering Analysis for Deep-Submicrometer Dimensions: A New Structural Approach

Hyungsoon Shin, T. James Bordelon, Ai F. Tasch, Christine M. Maziar

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A new MOS transistor structural approach (Hot-Carrier-Suppressed MOSFET) capable of substantially suppressing adverse hot-carrier effects while maintaining the other desired performance and manufacturability characteristics of deep-submicrometer MOSFET's (Lgate ≤ 0.35 μm) is described. This structure is unique in having a lower doped N region located behind (or above) a very shallow, steeply profiled source/drain junction. In contrast, LDD types of MOSFET's have an N region with a more graded doping profile immediately adjacent to the channel region. The simulated characteristics of the HCS MOSFET structure indicate approximately one order of magnitude less substrate current in comparison to an LDD type of MOSFET whose structure and doping parameters are optimized for combined performance, reliability, and manufacturability. In terms of combined performance, reliability, and manufacturability, the HCS MOSFET should permit MOSFET devices to be more successfully scaled at deep-submicrometer dimensions.

Original languageEnglish
Pages (from-to)1922-1927
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume39
Issue number8
DOIs
StatePublished - Aug 1992

Fingerprint

Dive into the research topics of 'MOSFET Drain Engineering Analysis for Deep-Submicrometer Dimensions: A New Structural Approach'. Together they form a unique fingerprint.

Cite this