TY - JOUR
T1 - Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors
AU - Lee, Byoung H.
AU - Im, Kyo K.
AU - Lee, Kwang H.
AU - Im, Seongil
AU - Sung, Myung M.
N1 - Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea government (MOST) (No. R01-2007-000-10402-0 and No. 2008-02378), and by the Korea Research Foundation (KOSEF) Grant funded by the Korea government (MOEHRD, Basic Research Promotion Fund) (KRF-2007-313-C00383).
PY - 2009/5/29
Y1 - 2009/5/29
N2 - Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 °C using MLD with repeated sequential adsorptions of C{double bond, long}C terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO2 inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH3)3)4 and H2O. The prepared SAOL-ZrO2 organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (~ 16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm2/V s, operating at - 1 V with an on/off current ratio of ~ 103.
AB - Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 °C using MLD with repeated sequential adsorptions of C{double bond, long}C terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO2 inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH3)3)4 and H2O. The prepared SAOL-ZrO2 organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (~ 16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm2/V s, operating at - 1 V with an on/off current ratio of ~ 103.
KW - Atomic layer deposition
KW - Molecular layer deposition
KW - Organic thin film transistor
KW - Organic-inorganic nanohybrid thin films
KW - Self-assembled organic monolayers
UR - http://www.scopus.com/inward/record.url?scp=65449160456&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2009.01.173
DO - 10.1016/j.tsf.2009.01.173
M3 - Article
AN - SCOPUS:65449160456
VL - 517
SP - 4056
EP - 4060
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 14
ER -