Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors

Byoung H. Lee, Kyo K. Im, Kwang H. Lee, Seongil Im, Myung M. Sung

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 °C using MLD with repeated sequential adsorptions of C{double bond, long}C terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO2 inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH3)3)4 and H2O. The prepared SAOL-ZrO2 organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (~ 16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm2/V s, operating at - 1 V with an on/off current ratio of ~ 103.

Original languageEnglish
Pages (from-to)4056-4060
Number of pages5
JournalThin Solid Films
Volume517
Issue number14
DOIs
StatePublished - 29 May 2009

Keywords

  • Atomic layer deposition
  • Molecular layer deposition
  • Organic thin film transistor
  • Organic-inorganic nanohybrid thin films
  • Self-assembled organic monolayers

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