Molecular dynamics simulation of laser ablation of silicon

Rüdiger F.W. Herrmann; Jens Gerlach; Eleanor E.B. Campbell

doi:10.1016/S0168-583X(96)00565-4

Molecular dynamics simulation of laser ablation of silicon

Rüdiger F.W. Herrmann, Jens Gerlach, Eleanor E.B. Campbell

Department of Physics

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34 Scopus citations

Abstract

Laser ablation of silicon surfaces has been investigated by molecular dynamics (MD) simulations. Results for laser pulse lengths of 200 fs, 1 ps and 5 ps have been obtained for different pulse energy densities. Structures of approximately 100 Å × 100 Å were simulated. In some cases the impact of up to five successive laser pulses was studied. Calculations of up to 20 ps after the onset of the laser have been performed. The major part of the atoms is removed on a picosecond time scale even for fs laser pulses. Pressure waves running through the crystal could be traced. Recrystallization of melted silicon leads to irregular crystalline structures around the ablated hole. Redeposition of atoms on the surface could be observed.

Original language	English
Pages (from-to)	401-404
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	122
Issue number	3
DOIs	https://doi.org/10.1016/S0168-583X(96)00565-4
State	Published - Feb 1997

Bibliographical note

Funding Information:
Acknowledgements 44 1 8 We acknowledgef inancial supportb y the Bundesminis-Fig. 2. Ablation rate from simulation of an 80 fs laser pulse terium ftir Bildung, Wissenschaft, Forschung und Tech-impact on a silicon surface (0.012 J/cm2). nologie (BMBF) under Grant 13N659l/ I (PROBE).

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title = "Molecular dynamics simulation of laser ablation of silicon",

abstract = "Laser ablation of silicon surfaces has been investigated by molecular dynamics (MD) simulations. Results for laser pulse lengths of 200 fs, 1 ps and 5 ps have been obtained for different pulse energy densities. Structures of approximately 100 {\AA} × 100 {\AA} were simulated. In some cases the impact of up to five successive laser pulses was studied. Calculations of up to 20 ps after the onset of the laser have been performed. The major part of the atoms is removed on a picosecond time scale even for fs laser pulses. Pressure waves running through the crystal could be traced. Recrystallization of melted silicon leads to irregular crystalline structures around the ablated hole. Redeposition of atoms on the surface could be observed.",

author = "Herrmann, {R{\"u}diger F.W.} and Jens Gerlach and Campbell, {Eleanor E.B.}",

note = "Funding Information: Acknowledgements 44 1 8 We acknowledgef inancial supportb y the Bundesminis-Fig. 2. Ablation rate from simulation of an 80 fs laser pulse terium ftir Bildung, Wissenschaft, Forschung und Tech-impact on a silicon surface (0.012 J/cm2). nologie (BMBF) under Grant 13N659l/ I (PROBE).",

year = "1997",

month = feb,

doi = "10.1016/S0168-583X(96)00565-4",

language = "English",

volume = "122",

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AU - Herrmann, Rüdiger F.W.

AU - Gerlach, Jens

AU - Campbell, Eleanor E.B.

N1 - Funding Information: Acknowledgements 44 1 8 We acknowledgef inancial supportb y the Bundesminis-Fig. 2. Ablation rate from simulation of an 80 fs laser pulse terium ftir Bildung, Wissenschaft, Forschung und Tech-impact on a silicon surface (0.012 J/cm2). nologie (BMBF) under Grant 13N659l/ I (PROBE).

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N2 - Laser ablation of silicon surfaces has been investigated by molecular dynamics (MD) simulations. Results for laser pulse lengths of 200 fs, 1 ps and 5 ps have been obtained for different pulse energy densities. Structures of approximately 100 Å × 100 Å were simulated. In some cases the impact of up to five successive laser pulses was studied. Calculations of up to 20 ps after the onset of the laser have been performed. The major part of the atoms is removed on a picosecond time scale even for fs laser pulses. Pressure waves running through the crystal could be traced. Recrystallization of melted silicon leads to irregular crystalline structures around the ablated hole. Redeposition of atoms on the surface could be observed.

AB - Laser ablation of silicon surfaces has been investigated by molecular dynamics (MD) simulations. Results for laser pulse lengths of 200 fs, 1 ps and 5 ps have been obtained for different pulse energy densities. Structures of approximately 100 Å × 100 Å were simulated. In some cases the impact of up to five successive laser pulses was studied. Calculations of up to 20 ps after the onset of the laser have been performed. The major part of the atoms is removed on a picosecond time scale even for fs laser pulses. Pressure waves running through the crystal could be traced. Recrystallization of melted silicon leads to irregular crystalline structures around the ablated hole. Redeposition of atoms on the surface could be observed.

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JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 3

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Molecular dynamics simulation of laser ablation of silicon

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