Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment

Hogyoung Kim, Yunae Cho, Chan Yeong Jung, Se Hyun Kim, Dong Wook Kim

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Using current-voltage (I-V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100-300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100 W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm-2 K-2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole-Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample.

Original languageEnglish
Article number125016
JournalSemiconductor Science and Technology
Issue number12
StatePublished - 2015

Bibliographical note

Funding Information:
YC and DK acknowledge the support from a Basic Science Research Program through the National Research Foundation of Korea (NRF-2013R1A1A2063744).

Publisher Copyright:
© 2015 IOP Publishing Ltd.


  • Barrier height
  • Oxygen plasma
  • Reverse current transport


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