Modification of Ge2Sb2Te5 by the Addition of SiOx for improved operation of phase change random access memory

Jin Seo Noh, Dong Seok Suh, Sang Mock Lee, Kijoon H.P. Kim, Woong Chul Shin, Eunhye Lee, Youn Seon Kang, Ju Cheol Park, Ki Hong Kim, Yoonho Khang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


Conventional Ge2Sb2Te5 (GST) was modified by adding up a small amount of SiOx, using co-sputtering technique from multiple targets. The SiOx content was gradually increased by increasing the power applied to SiOx target, up to 8 volume percent. The sheet resistance of SiOx-containing GST exponentially increased, when the room-temperature-deposited samples were annealed at 300°C. Transmission electron microscopy images revealed that no SiOx particulates were formed, which was confirmed by Gattan image filtering. It was indicated by x-ray diffraction patterns that the grain size of SiO x-containing GST is smaller than normal GST with lattice locally distorted at its crystalline state, suggesting that molecular SiOx is homogeneously distributed throughout the GST matrix. We observed that the crystallization temperature of SiOx-containing GST is gradually elevated by increasing the SiOx content, while the melting point decreased. These observations led to the reset current reduction, which is a critical requirement for the high density PRAM.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages6
StatePublished - 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2005 Materials Research Society Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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