Modeling of alpha-particle-induced soft error rate in DRAM

Hyungsoon Shin

doi:10.1109/16.784184

Modeling of alpha-particle-induced soft error rate in DRAM

Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Alpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics.

Original language	English
Pages (from-to)	1850-1857
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	9
DOIs	https://doi.org/10.1109/16.784184
State	Published - 1999

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title = "Modeling of alpha-particle-induced soft error rate in DRAM",

abstract = "Alpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics.",

author = "Hyungsoon Shin",

note = "Funding Information: Manuscript received June 30, 1998; revised December 1, 1998. This work was supported by LG Semicon Co., Ltd. The review of this paper was arranged by Editor M. Fukuma. The author is with the Department of Electronic Engineering, Ewha Womans University, Seoul, Korea. Publisher Item Identifier S 0018-9383(99)06650-2.",

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AB - Alpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics.

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Modeling of alpha-particle-induced soft error rate in DRAM

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