TY - JOUR
T1 - Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
AU - Lee, Kookjin
AU - Choi, Junhee
AU - Kaczer, Ben
AU - Grill, Alexander
AU - Lee, Jae Woo
AU - Van Beek, Simon
AU - Bury, Erik
AU - Diaz-Fortuny, Javier
AU - Chasin, Adrian
AU - Lee, Jaewoo
AU - Chun, Jungu
AU - Shin, Dong Hoon
AU - Na, Junhong
AU - Cho, Hyeran
AU - Lee, Sang Wook
AU - Kim, Gyu Tae
N1 - Funding Information:
This research was supported by Nano‐Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT and also supported by the Future Semiconductor Device Technology Development Program funded by Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC) (NRF‐2017M3A7B4049119 and Grant 10067739, G.‐T.K.) supervised by the IITP (Institute for Information & communications Technology Planning & Evaluation). S.L. also wishes to acknowledge the Basic Research Program (NRF‐2019R1A2C1085641, NRF‐2019R1A4A1029052, NRF‐2018R1A6A1A03025340) through the National Research Foundation of Korea (NRF) and also supported by Human Frontier Science Program (RGP00026/2019). Further, J.W.L. also wishes to acknowledge the MOTIE (Ministry of Trade, Industry & Energy (10067808)). All the authors sincerely appreciate Pablo Saraza‐Canflanca for disscusing with us and give us many advices.
Funding Information:
This research was supported by Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT and also supported by the Future Semiconductor Device Technology Development Program funded by Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC) (NRF-2017M3A7B4049119 and Grant 10067739, G.-T.K.) supervised by the IITP (Institute for Information & communications Technology Planning & Evaluation). S.L. also wishes to acknowledge the Basic Research Program (NRF-2019R1A2C1085641, NRF-2019R1A4A1029052, NRF-2018R1A6A1A03025340) through the National Research Foundation of Korea (NRF) and also supported by Human Frontier Science Program (RGP00026/2019). Further, J.W.L. also wishes to acknowledge the MOTIE (Ministry of Trade, Industry & Energy (10067808)). All the authors sincerely appreciate Pablo Saraza-Canflanca for disscusing with us and give us many advices.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/6/2
Y1 - 2021/6/2
N2 - In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias.
AB - In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias.
KW - 2D materials
KW - defects
KW - dual-gate ReS
KW - field-effect transistors
KW - hexagonal boron nitride
UR - http://www.scopus.com/inward/record.url?scp=85103975333&partnerID=8YFLogxK
U2 - 10.1002/adfm.202100625
DO - 10.1002/adfm.202100625
M3 - Article
AN - SCOPUS:85103975333
SN - 1616-301X
VL - 31
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 23
M1 - 2100625
ER -