Model for roll-off behaviour of electron effective mobility from universal curve

Hyungsoon Shin

doi:10.1049/el:19951188

Model for roll-off behaviour of electron effective mobility from universal curve

Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new physically-based model for electron effective mobility in MOS inversion layers has been developed. By accounting for screened Coulomb scattering owing to ionised impurities, our model describes very well the roll-off of mobility in the low field region for a wide range of channel doping levels.

Original language	English
Pages (from-to)	1789-1791
Number of pages	3
Journal	Electronics Letters
Volume	31
Issue number	20
DOIs	https://doi.org/10.1049/el:19951188
State	Published - 28 Sep 1995

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title = "Model for roll-off behaviour of electron effective mobility from universal curve",

abstract = "A new physically-based model for electron effective mobility in MOS inversion layers has been developed. By accounting for screened Coulomb scattering owing to ionised impurities, our model describes very well the roll-off of mobility in the low field region for a wide range of channel doping levels.",

author = "Hyungsoon Shin",

year = "1995",

month = sep,

day = "28",

doi = "10.1049/el:19951188",

language = "English",

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pages = "1789--1791",

journal = "Electronics Letters",

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PY - 1995/9/28

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AB - A new physically-based model for electron effective mobility in MOS inversion layers has been developed. By accounting for screened Coulomb scattering owing to ionised impurities, our model describes very well the roll-off of mobility in the low field region for a wide range of channel doping levels.

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DO - 10.1049/el:19951188

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SP - 1789

EP - 1791

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Model for roll-off behaviour of electron effective mobility from universal curve

Abstract

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