Model for roll-off behaviour of electron effective mobility from universal curve

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Abstract

A new physically-based model for electron effective mobility in MOS inversion layers has been developed. By accounting for screened Coulomb scattering owing to ionised impurities, our model describes very well the roll-off of mobility in the low field region for a wide range of channel doping levels.

Original languageEnglish
Pages (from-to)1789-1791
Number of pages3
JournalElectronics Letters
Volume31
Issue number20
DOIs
StatePublished - 28 Sep 1995

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