Abstract
A new physically-based model for electron effective mobility in MOS inversion layers has been developed. By accounting for screened Coulomb scattering owing to ionised impurities, our model describes very well the roll-off of mobility in the low field region for a wide range of channel doping levels.
Original language | English |
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Pages (from-to) | 1789-1791 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 31 |
Issue number | 20 |
DOIs | |
State | Published - 28 Sep 1995 |