MOCVD growth and characterization of AlGaInN nanowires and nanostructures

J. Han, K. Kim, J. Su, M. Gherasimova, A. V. Nurmikko, S. F. Chichibu, C. Broadbridge

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Growth of GaN and AlGaInN nanowires using metalorganic chemical vapor deposition (MOCVD) is investigated. It is determined that surface kinetics play an important role in non-equilibrium synthesis process such as MOCVD, in contrast to near-equilibrium synthesis by hotwall furnace reactor. Examination of crystallographic properties of GaN nanowires reveals preferential growth directions which are perpendicular to the c-axis. Such a tendency is analyzed by both thermodynamic and kinetic arguments and attributed to the minimization of (side wall) surface energy. Spontaneous formation of Al(Ga)N/GaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The knowledge of crystallographic alignment is applied to the formation of arrayed GaN nanowires in both vertical and horizontal fashions, resulting in potentially new paradigms for creating nanoscale devices.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages10
StatePublished - 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2005 Materials Research Society Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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