TY - JOUR
T1 - Mixed Lead–Tin Halide Perovskites for Efficient and Wavelength-Tunable Near-Infrared Light-Emitting Diodes
AU - Qiu, Weiming
AU - Xiao, Zhengguo
AU - Roh, Kwangdong
AU - Noel, Nakita K.
AU - Shapiro, Andrew
AU - Heremans, Paul
AU - Rand, Barry P.
N1 - Funding Information:
W.Q. and Z.X. contributed equally. This work was supported by the Air Force Office of Scientific Research under Award no. FA9550-18-1-0037. W.Q. would like to thank the financial support of the postdoctoral researcher grant (12Z4618N) as well as the travel grant (V412918N) received from Research Foundation Flanders (FWO), Belgium.
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/1/18
Y1 - 2019/1/18
N2 - Near-infrared (NIR) light-emitting diodes (LEDs), with emission wavelengths between 800 and 950 nm, are useful for various applications, e.g., night-vision devices, optical communication, and medical treatments. Yet, devices using thin film materials like organic semiconductors and lead based colloidal quantum dots face certain fundamental challenges that limit the improvement of external quantum efficiency (EQE), making the search of alternative NIR emitters important for the community. In this work, efficient NIR LEDs with tunable emission from 850 to 950 nm, using lead–tin (Pb-Sn) halide perovskite as emitters are demonstrated. The best performing device exhibits an EQE of 5.0% with a peak emission wavelength of 917 nm, a turn-on voltage of 1.65 V, and a radiance of 2.7 W Sr−1 m−2 when driven at 4.5 V. The emission spectra of mixed Pb-Sn perovskites are tuned either by changing the Pb:Sn ratio or by incorporating bromide, and notably exhibit no phase separation during device operation. The work demonstrates that mixed Pb-Sn perovskites are promising next generation NIR emitters.
AB - Near-infrared (NIR) light-emitting diodes (LEDs), with emission wavelengths between 800 and 950 nm, are useful for various applications, e.g., night-vision devices, optical communication, and medical treatments. Yet, devices using thin film materials like organic semiconductors and lead based colloidal quantum dots face certain fundamental challenges that limit the improvement of external quantum efficiency (EQE), making the search of alternative NIR emitters important for the community. In this work, efficient NIR LEDs with tunable emission from 850 to 950 nm, using lead–tin (Pb-Sn) halide perovskite as emitters are demonstrated. The best performing device exhibits an EQE of 5.0% with a peak emission wavelength of 917 nm, a turn-on voltage of 1.65 V, and a radiance of 2.7 W Sr−1 m−2 when driven at 4.5 V. The emission spectra of mixed Pb-Sn perovskites are tuned either by changing the Pb:Sn ratio or by incorporating bromide, and notably exhibit no phase separation during device operation. The work demonstrates that mixed Pb-Sn perovskites are promising next generation NIR emitters.
KW - light-emitting devices
KW - mixed lead–tin perovskites
KW - near-infrared
KW - tunable spectrum
UR - http://www.scopus.com/inward/record.url?scp=85057447478&partnerID=8YFLogxK
U2 - 10.1002/adma.201806105
DO - 10.1002/adma.201806105
M3 - Article
C2 - 30484911
AN - SCOPUS:85057447478
SN - 0935-9648
VL - 31
JO - Advanced Materials
JF - Advanced Materials
IS - 3
M1 - 1806105
ER -