Mitigation of surface doping in VLS-grown Si nanowires

Jerome K. Hyun, Eric R. Hemesath, Lincoln J. Lauhon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Semiconducting nanowires grown by the VLS method can develop non-uniform doping profiles along the growth direction due to unintentional surface doping during synthesis. For CVD growth using hydride precursors, surface doping can be suppressed by high H2 partial pressures, thereby improving the uniformity of the dopant distribution. Quantitative calculations of the electrostatic field and carrier concentration derived from scanning photocurrent microscopy measurements confirm suppression of surface doping by phosphine for Si nanowires grown in H2 compared with those grown in He. Nanowires grown in He show 100-fold increases in carrier concentration through surface doping, whereas nanowires grown in a large H2 partial pressure show only two-fold increases for similar growth times. As a result, the carrier concentration gradients are greatly reduced for nanowires grown in H 2. These results demonstrate a general approach to in situ control of the surface doping in CVD of nanowires.

Original languageEnglish
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Number of pages5
StatePublished - 2010
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: 17 Aug 201020 Aug 2010

Publication series

Name2010 10th IEEE Conference on Nanotechnology, NANO 2010


Conference2010 10th IEEE Conference on Nanotechnology, NANO 2010
Country/TerritoryKorea, Republic of
CityIlsan, Gyeonggi-Do


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