Microwave noise in epitaxial graphene on SiC

Linas Ardaravičius; Juozapas Liberis; Emilis Šermukšnis; Joon Young Kwak; Hussain A. Alsalman; Michael G. Spencer

doi:10.1109/ICNF.2017.7986005

Microwave noise in epitaxial graphene on SiC

Linas Ardaravičius, Juozapas Liberis, Emilis Šermukšnis, Joon Young Kwak, Hussain A. Alsalman, Michael G. Spencer

Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

High frequency noise was measured for epitaxial graphene on SiC. The noise measurements were carried out in the frequency range from 200 MHz up to 10 GHz in the direction parallel to the applied electric field in the graphene layer. Nanosecond voltage pulses were applied to minimize the effect of graphene layer self-heating. The measured spectral density of current fluctuations within 200 MHz-2.5 GHz frequency range can be approximated with a generation-recombination noise and a white noise contribution. Shot noise dominates at 10 GHz. Fano factor of suppressed shot noise was estimated. The shot noise was possibly associated with electron jumps across the potential barriers located in the graphene layer. Current-voltage characteristics were measured up to 17 kV/cm electric field and the maximum drift velocity was estimated as ∼5.2×10⁷ cm/s.

Original language	English
Title of host publication	2017 International Conference on Noise and Fluctuations, ICNF 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509027606
DOIs	https://doi.org/10.1109/ICNF.2017.7986005
State	Published - 19 Jul 2017
Event	2017 International Conference on Noise and Fluctuations, ICNF 2017 - Vilnius, Lithuania Duration: 20 Jun 2017 → 23 Jun 2017

Publication series

Name	2017 International Conference on Noise and Fluctuations, ICNF 2017

Conference

Conference	2017 International Conference on Noise and Fluctuations, ICNF 2017
Country/Territory	Lithuania
City	Vilnius
Period	20/06/17 → 23/06/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

Keywords

contact resistance
Fano factor
few layer graphene
high electric field
high frequency noise
noise temperature
pulsed I-V measurements

Access to Document

10.1109/ICNF.2017.7986005

Cite this

Ardaravičius, L., Liberis, J., Šermukšnis, E., Kwak, J. Y., Alsalman, H. A., & Spencer, M. G. (2017). Microwave noise in epitaxial graphene on SiC. In 2017 International Conference on Noise and Fluctuations, ICNF 2017 Article 7986005 (2017 International Conference on Noise and Fluctuations, ICNF 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICNF.2017.7986005

@inproceedings{4776eade54f94278b38479d253a4d0c8,

title = "Microwave noise in epitaxial graphene on SiC",

abstract = "High frequency noise was measured for epitaxial graphene on SiC. The noise measurements were carried out in the frequency range from 200 MHz up to 10 GHz in the direction parallel to the applied electric field in the graphene layer. Nanosecond voltage pulses were applied to minimize the effect of graphene layer self-heating. The measured spectral density of current fluctuations within 200 MHz-2.5 GHz frequency range can be approximated with a generation-recombination noise and a white noise contribution. Shot noise dominates at 10 GHz. Fano factor of suppressed shot noise was estimated. The shot noise was possibly associated with electron jumps across the potential barriers located in the graphene layer. Current-voltage characteristics were measured up to 17 kV/cm electric field and the maximum drift velocity was estimated as ∼5.2×107 cm/s.",

keywords = "contact resistance, Fano factor, few layer graphene, high electric field, high frequency noise, noise temperature, pulsed I-V measurements",

author = "Linas Ardaravi{\v c}ius and Juozapas Liberis and Emilis {\v S}ermuk{\v s}nis and Kwak, {Joon Young} and Alsalman, {Hussain A.} and Spencer, {Michael G.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Conference on Noise and Fluctuations, ICNF 2017 ; Conference date: 20-06-2017 Through 23-06-2017",

year = "2017",

month = jul,

day = "19",

doi = "10.1109/ICNF.2017.7986005",

language = "English",

series = "2017 International Conference on Noise and Fluctuations, ICNF 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 International Conference on Noise and Fluctuations, ICNF 2017",

}

Ardaravičius, L, Liberis, J, Šermukšnis, E, Kwak, JY, Alsalman, HA & Spencer, MG 2017, Microwave noise in epitaxial graphene on SiC. in 2017 International Conference on Noise and Fluctuations, ICNF 2017., 7986005, 2017 International Conference on Noise and Fluctuations, ICNF 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Conference on Noise and Fluctuations, ICNF 2017, Vilnius, Lithuania, 20/06/17. https://doi.org/10.1109/ICNF.2017.7986005

Microwave noise in epitaxial graphene on SiC. / Ardaravičius, Linas; Liberis, Juozapas; Šermukšnis, Emilis et al.
2017 International Conference on Noise and Fluctuations, ICNF 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7986005 (2017 International Conference on Noise and Fluctuations, ICNF 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Microwave noise in epitaxial graphene on SiC

AU - Ardaravičius, Linas

AU - Liberis, Juozapas

AU - Šermukšnis, Emilis

AU - Kwak, Joon Young

AU - Alsalman, Hussain A.

AU - Spencer, Michael G.

PY - 2017/7/19

Y1 - 2017/7/19

N2 - High frequency noise was measured for epitaxial graphene on SiC. The noise measurements were carried out in the frequency range from 200 MHz up to 10 GHz in the direction parallel to the applied electric field in the graphene layer. Nanosecond voltage pulses were applied to minimize the effect of graphene layer self-heating. The measured spectral density of current fluctuations within 200 MHz-2.5 GHz frequency range can be approximated with a generation-recombination noise and a white noise contribution. Shot noise dominates at 10 GHz. Fano factor of suppressed shot noise was estimated. The shot noise was possibly associated with electron jumps across the potential barriers located in the graphene layer. Current-voltage characteristics were measured up to 17 kV/cm electric field and the maximum drift velocity was estimated as ∼5.2×107 cm/s.

AB - High frequency noise was measured for epitaxial graphene on SiC. The noise measurements were carried out in the frequency range from 200 MHz up to 10 GHz in the direction parallel to the applied electric field in the graphene layer. Nanosecond voltage pulses were applied to minimize the effect of graphene layer self-heating. The measured spectral density of current fluctuations within 200 MHz-2.5 GHz frequency range can be approximated with a generation-recombination noise and a white noise contribution. Shot noise dominates at 10 GHz. Fano factor of suppressed shot noise was estimated. The shot noise was possibly associated with electron jumps across the potential barriers located in the graphene layer. Current-voltage characteristics were measured up to 17 kV/cm electric field and the maximum drift velocity was estimated as ∼5.2×107 cm/s.

KW - contact resistance

KW - Fano factor

KW - few layer graphene

KW - high electric field

KW - high frequency noise

KW - noise temperature

KW - pulsed I-V measurements

UR - http://www.scopus.com/inward/record.url?scp=85027995511&partnerID=8YFLogxK

U2 - 10.1109/ICNF.2017.7986005

DO - 10.1109/ICNF.2017.7986005

M3 - Conference contribution

AN - SCOPUS:85027995511

T3 - 2017 International Conference on Noise and Fluctuations, ICNF 2017

BT - 2017 International Conference on Noise and Fluctuations, ICNF 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Conference on Noise and Fluctuations, ICNF 2017

Y2 - 20 June 2017 through 23 June 2017

ER -

Microwave noise in epitaxial graphene on SiC

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this