@article{dd88e257e36745a2a0d05f94c517efd9,
title = "Microwave analysis of SiGe heterojunction double-gate tunneling field-effect transistor through its small-signal equivalent circuit",
abstract = " In this study, Si 0.5 Ge 0.5 was used as a source junction material in a tunneling field-effect transistor (TFET), which was analyzed using technology computer-aided design (TCAD) simulation and a small-signal non-quasi static (NQS) equivalent circuit. The NQS equivalent circuit with additional tunneling resistance (R tunnel ) enables more accurate analyses. By using a de-embedding process, small-signal parameters in the intrinsic area were obtained. This process was used to analyze the resistance and capacitance in each section, the tendencies of the materials, and the voltage. The error between the NQS equivalent circuit and TCAD device simulation was within 1.9% in the 400-GHz regime. A cut-off frequency (f T ) of up to 0.876 GHz and maximum oscillation frequency (f max ) of 146 GHz were obtained.",
keywords = "device simulation, Si Ge, small-signal equivalent circuit, source junction, tunneling field-effect transistor",
author = "Jung, {Yung Hun} and Kang, {In Man} and Seongjae Cho",
note = "Funding Information: information Korea Evaluation Institute of Industrial Technology, Grant/Award Numbers: 10052928, 10080513; Ministry of Science and ICT, Grant/Award Number: 2017R1A2B2011570This work was supported by the Ministry of Science and ICT (MSIT) of Korea through the mid-career researcher support program (Grant No. 2017R1A2B2011570) and also supported by the Ministry of Trade, Industry and Energy (MOTIE) of Korea with Korea Semiconductor Research Consortium (KSRC) program for the development of future semiconductor devices (Grant No. 10080513 and 10052928). Funding Information: This work was supported by the Ministry of Science and ICT (MSIT) of Korea through the mid-career researcher support program (Grant No. 2017R1A2B2011570) and also supported by the Ministry of Trade, Industry and Energy (MOTIE) of Korea with Korea Semiconductor Research Consortium (KSRC) program for the development of future semiconductor devices (Grant No. 10080513 and 10052928). Publisher Copyright: {\textcopyright} 2019 Wiley Periodicals, Inc.",
year = "2019",
month = jun,
doi = "10.1002/mmce.21678",
language = "English",
volume = "29",
journal = "International Journal of RF and Microwave Computer-Aided Engineering",
issn = "1096-4290",
publisher = "John Wiley & Sons Inc.",
number = "6",
}