Microstructures and electrical properties of CaCu3Ti 4O12 thin films on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition

Sung Yun Lee, Soon Mi Choi, Mi Young Kim, Sang Im Yoo, Ji Hye Lee, William Jo, Young Hwan Kim, Kyoung Jin Choi

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5 Scopus citations

Abstract

We investigated microstructures, compositional distributions, and electrical properties of dielectric CaCu3Ti4O12 (CCTO) thin films deposited on Pt/TiO2/SiO2/Si substrates from 700 to 800 °C by pulsed laser deposition. With increasing the deposition temperature from 700 to 750 °C, the dielectric constants (εr) of CCTO films were greatly enhanced from ∼300 to ∼2000 at 10 kHz, respectively. However, the εr values of CCTO films were gradually decreased above 750 °C, which was surely attributable to the formation of a TiO2-rich dead layer at the interface between CCTO and Pt electrode. Compositional analyses by Auger electron spectroscopy, energy dispersive spectroscopy, and electron energy loss spectroscopy revealed that the TiO2-rich dead layer became thicker because of severe Cu diffusion from CCTO films to Pt electrode. The leakage current behaviors of CCTO films are in good agreement with Poole-Frenkel conduction mechanism, where both the TiO2-rich dead layer and rutile TiO2 nanocrystalline particles are considered to play a role of charge trapping centers.

Original languageEnglish
Pages (from-to)2543-2551
Number of pages9
JournalJournal of Materials Research
Volume26
Issue number19
DOIs
StatePublished - 2011

Keywords

  • Dielectric properties
  • Diffusion
  • Transmission electron microscopy

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