Memory effect of low-temperature processed ZnO thin-film transistors having metallic nanoparticles as charge trapping elements

Young Su Park, Soo Jin Kim, Si Hoon Lyu, Byoung Hoon Lee, Myung Mo Sung, Jaegab Lee, Jang Sik Lee

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (Au NP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the program/erase operations that resulted from the charging/discharging of charge carriers in the charge trapping elements. Reliable non-volatile memory properties were also confirmed by the endurance and data retention measurements. The low temperature processes of the key device elements, i.e., Au NP charge trapping layer and ZnO channel layer, enable the use of this device structure to the transparent/flexible non-volatile memory applications in the near future.

Original languageEnglish
Pages (from-to)1344-1347
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number2
DOIs
StatePublished - 2012

Keywords

  • Charge trapping
  • Metallic nanoparticles
  • Non-volatile memory
  • Zinc oxide

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