Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

Jin Hyuck Heo; Dong Hee Shin; Sang Hwa Moon; Min Ho Lee; Do Hun Kim; Seol Hee Oh; William Jo; Sang Hyuk Im

doi:10.1038/s41598-017-16805-4

Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

Jin Hyuck Heo
, Dong Hee Shin
, Sang Hwa Moon
, Min Ho Lee
, Do Hun Kim
, Seol Hee Oh
, William Jo
, Sang Hyuk Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

The crystal grain size of CH₃NH₃PbI₃ (MAPbI₃) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ∼60 nm to ∼600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI₃ OHP non-volatile resistive random access memory with ∼60 nm crystal grain size exhibited >0.1 TB/in² storage capacity, >600 cycles endurance, >10⁴ s data retention time, ∼0.7 V set, and ∼-0.61 V re-set bias voltage.

Original language	English
Article number	16586
Journal	Scientific Reports
Volume	7
Issue number	1
DOIs	https://doi.org/10.1038/s41598-017-16805-4
State	Published - 1 Dec 2017

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title = "Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory",

abstract = "The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ∼60 nm to ∼600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ∼60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endurance, >104 s data retention time, ∼0.7 V set, and ∼-0.61 V re-set bias voltage.",

author = "Heo, \{Jin Hyuck\} and Shin, \{Dong Hee\} and Moon, \{Sang Hwa\} and Lee, \{Min Ho\} and Kim, \{Do Hun\} and Oh, \{Seol Hee\} and William Jo and Im, \{Sang Hyuk\}",

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doi = "10.1038/s41598-017-16805-4",

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AU - Heo, Jin Hyuck

AU - Shin, Dong Hee

AU - Moon, Sang Hwa

AU - Lee, Min Ho

AU - Kim, Do Hun

AU - Oh, Seol Hee

AU - Jo, William

AU - Im, Sang Hyuk

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ∼60 nm to ∼600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ∼60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endurance, >104 s data retention time, ∼0.7 V set, and ∼-0.61 V re-set bias voltage.

AB - The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ∼60 nm to ∼600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ∼60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endurance, >104 s data retention time, ∼0.7 V set, and ∼-0.61 V re-set bias voltage.

UR - https://www.scopus.com/pages/publications/85036508259

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VL - 7

JO - Scientific Reports

JF - Scientific Reports

IS - 1

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ER -

Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

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