Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity

Yanggeun Joo, Eunji Hwang, Heemyoung Hong, Suyeon Cho, Heejun Yang

Research output: Contribution to journalReview articlepeer-review

3 Scopus citations

Abstract

Memory devices are an essential part of modern electronics. Efforts to move beyond the traditional “read” and “write” of digital information in volatile and non-volatile memory devices are leading to the rapid growth of neuromorphic technology. There is a growing demand for memory devices with continuous memory states with various retention times and greater integration density with more energy-efficient mechanisms. Two types of memory devices (i.e., non-volatile digital memory and neuro-synaptic devices) have been extensively investigated with emerging materials. Among numerous materials for such memory devices, in this review, the authors focus on 2D ferroelectric materials for promising memory and synaptic devices. Three types of memory devices based on 2D ferroelectric materials are classified and discussed here: 1) ferroelectric gating of semiconducting channels, 2) active ferroelectric channels, and 3) ferroelectric tunnel junction devices. It is known that atomically thin geometry competes with ferroelectricity, which can degrade the quality of the devices based on atomically thin ferroelectric materials. Various efforts to resolve the fundamental issue with emerging 2D ferroelectric materials and how they can be used as a critical element for memory and synaptic devices are surveyed.

Original languageEnglish
Article number2300211
JournalAdvanced Electronic Materials
Volume9
Issue number8
DOIs
StatePublished - Aug 2023

Bibliographical note

Funding Information:
This paper is based on a research that had been conducted as part of the KAIST-funded Global Singularity Research Program for 2021. H.Y. acknowledges support from the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC -MA1701-52 and National Research Foundation of Korea (NRF) under Grant No. NRF-2021M3H4A1A03054856. S.C. was supported by the Commercialization Promotion Agency for R&D Outcomes (COMPA) funded by the Ministry of Science and ICT(MSIT)(RS–2023–00256933).

Funding Information:
This paper is based on a research that had been conducted as part of the KAIST‐funded Global Singularity Research Program for 2021. H.Y. acknowledges support from the Samsung Research Funding & Incubation Center of Samsung Electronics, under project no. SRFC ‐MA1701‐52 and National Research Foundation of Korea (NRF) under Grant No. NRF‐2021M3H4A1A03054856. S.C. was supported by the Commercialization Promotion Agency for R&D Outcomes (COMPA) funded by the Ministry of Science and ICT(MSIT)(RS–2023–00256933).

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Keywords

  • 2D ferroelectricity
  • non-volatile memory
  • synaptic devices

Fingerprint

Dive into the research topics of 'Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity'. Together they form a unique fingerprint.

Cite this