TY - JOUR
T1 - Medium-Temperature-Oxidized GeO x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing
AU - Udaya Mohanan, Kannan
AU - Cho, Seongjae
AU - Park, Byung Gook
N1 - Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Ministry of Science and ICT of Korea (MSIT) under the Grant Number of 2021M3F3A2A01037927.
Funding Information:
The researchers and engineers in the Inter-university Semiconductor Research Center (ISRC) at Seoul National University are acknowledged for help with highly responsible maintenance and calibration of the nanofabrication tools.
Publisher Copyright:
© 2022, The Author(s).
PY - 2022
Y1 - 2022
N2 - Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and components need to be renovated to make a way out of the conventional software-driven artificial intelligence. In this work, we investigate the hardware performances of PIM architecture that can be presumably constructed by resistive-switching random-access memory (ReRAM) synapse fabricated with a relatively larger thermal budget in the full Si processing compatibility. By introducing a medium-temperature oxidation in which the sputtered Ge atoms are oxidized at a relatively higher temperature compared with the ReRAM devices fabricated by physical vapor deposition at room temperature, higher device reliability has been acquired. Based on the empirically obtained device parameters, a PIM architecture has been conceived and a system-level evaluations have been performed in this work. Considerations include the cycle-to-cycle variation in the GeOx ReRAM synapse, analog-to-digital converter resolution, synaptic array size, and interconnect latency for the system-level evaluation with the Canadian Institute for Advance Research-10 dataset. A fully Si processing-compatible and robust ReRAM synapse and its applicability for PIM are demonstrated. Graphical Abstract: [Figure not available: see fulltext.]
AB - Processing-in-memory (PIM) is emerging as a new computing paradigm to replace the existing von Neumann computer architecture for data-intensive processing. For the higher end-user mobility, low-power operation capability is more increasingly required and components need to be renovated to make a way out of the conventional software-driven artificial intelligence. In this work, we investigate the hardware performances of PIM architecture that can be presumably constructed by resistive-switching random-access memory (ReRAM) synapse fabricated with a relatively larger thermal budget in the full Si processing compatibility. By introducing a medium-temperature oxidation in which the sputtered Ge atoms are oxidized at a relatively higher temperature compared with the ReRAM devices fabricated by physical vapor deposition at room temperature, higher device reliability has been acquired. Based on the empirically obtained device parameters, a PIM architecture has been conceived and a system-level evaluations have been performed in this work. Considerations include the cycle-to-cycle variation in the GeOx ReRAM synapse, analog-to-digital converter resolution, synaptic array size, and interconnect latency for the system-level evaluation with the Canadian Institute for Advance Research-10 dataset. A fully Si processing-compatible and robust ReRAM synapse and its applicability for PIM are demonstrated. Graphical Abstract: [Figure not available: see fulltext.]
KW - Germanium oxide
KW - Low-power hardware neural network
KW - Medium-temperature oxidation
KW - Processing-in-memory (PIM)
KW - Resistive-switching random-access memory (ReRAM)
UR - http://www.scopus.com/inward/record.url?scp=85133460680&partnerID=8YFLogxK
U2 - 10.1186/s11671-022-03701-8
DO - 10.1186/s11671-022-03701-8
M3 - Article
AN - SCOPUS:85133460680
SN - 1931-7573
VL - 17
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
IS - 1
M1 - 63
ER -