Mechanisms for interstitial-mediated transient enhanced diffusion of N-type dopants

Scott A. Harrison, Thomas F. Edgar, Gyeong S. Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


As silicon transistors scale down, transient enhanced diffusion of n-type dopants has become a barrier toward achieving required junction depths for transistors. In this paper, we use density functional calculations to identify a pathway by which silicon interstitials (Sii) mediate As and P diffusion. We show that As-Sii and P-Sii pairs in the neutral and negative charge states diffuse via a mechanism in which the dopant is bond-centered at energy minima and threefold coordinated at the high energy saddle point during dopant migration. For both As-Sii and P-Si i pairs, we conclude that neutral pairs will dominate under intrinsic conditions while the neutral and negatively charged pairs will both contribute under heavily doped extrinsic conditions.

Original languageEnglish
Title of host publicationDoping Engineering for Device Fabrication
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558998683, 9781558998681
StatePublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: 18 Apr 200621 Apr 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2006 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA


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