Monte Carlo simulations of pattern-dependent charging during interlevel dielectric (ILD) deposition in high-density plasmas reveal that the initial conformality of the ILD film plays a crucial role in metal line charging up and the subsequent degradation to the buried gate oxide, to which the metal line is connected. Line charging occurs when the top dielectric is thick enough to prevent tunneling currents, while the sidewall dielectric thickness still allows tunneling currents to flow to the metal line; the differential charging of the sidewalls, which induces the latter currents, is caused by electron shading. The results suggest that charging can be reduced by depositing a more conformal ILD film around the metal line and/or by increasing the surface conductivity of the film.
|Number of pages||4|
|State||Published - 1998|
|Event||Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA|
Duration: 4 Jun 1998 → 5 Jun 1998
|Conference||Proceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID|
|City||Honolulu, HI, USA|
|Period||4/06/98 → 5/06/98|