Mechanism of charging damage during interlevel oxide deposition in high-density plasma tools

Gyeong S. Hwang, Konstantinos P. Giapis

Research output: Contribution to conferencePaperpeer-review

9 Scopus citations

Abstract

Monte Carlo simulations of pattern-dependent charging during interlevel dielectric (ILD) deposition in high-density plasmas reveal that the initial conformality of the ILD film plays a crucial role in metal line charging up and the subsequent degradation to the buried gate oxide, to which the metal line is connected. Line charging occurs when the top dielectric is thick enough to prevent tunneling currents, while the sidewall dielectric thickness still allows tunneling currents to flow to the metal line; the differential charging of the sidewalls, which induces the latter currents, is caused by electron shading. The results suggest that charging can be reduced by depositing a more conformal ILD film around the metal line and/or by increasing the surface conductivity of the film.

Original languageEnglish
Pages164-167
Number of pages4
StatePublished - 1998
EventProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID - Honolulu, HI, USA
Duration: 4 Jun 19985 Jun 1998

Conference

ConferenceProceedings of the 1998 3rd International Symposium on Plasma Process-Induced Damage, P2ID
CityHonolulu, HI, USA
Period4/06/985/06/98

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