Measurement system for doping and alloying trends in new thermoelectric materials

T. Hogan; N. Ghelani; S. Loo; S. Sportouch; S. J. Kim; D. Y. Chung; M. G. Kanatzidis

Measurement system for doping and alloying trends in new thermoelectric materials

T. Hogan
, N. Ghelani
, S. Loo
, S. Sportouch
, S. J. Kim
, D. Y. Chung
, M. G. Kanatzidis

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

Several new materials in the A₂Bi₈Se₁₃, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ₃ (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.

Original language	English
Pages (from-to)	671-674
Number of pages	4
Journal	International Conference on Thermoelectrics, ICT, Proceedings
State	Published - 1999
Event	18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA Duration: 29 Aug 1999 → 2 Sep 1999

Cite this

@article{2dfec27d362a46829bf007e6f9acb820,

title = "Measurement system for doping and alloying trends in new thermoelectric materials",

abstract = "Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.",

author = "T. Hogan and N. Ghelani and S. Loo and S. Sportouch and Kim, \{S. J.\} and Chung, \{D. Y.\} and Kanatzidis, \{M. G.\}",

year = "1999",

language = "English",

pages = "671--674",

journal = "International Conference on Thermoelectrics, ICT, Proceedings",

issn = "1094-2734",

note = "18th International Conference on Thermoelectrics (ICT'99) ; Conference date: 29-08-1999 Through 02-09-1999",

}

TY - JOUR

T1 - Measurement system for doping and alloying trends in new thermoelectric materials

AU - Hogan, T.

AU - Ghelani, N.

AU - Loo, S.

AU - Sportouch, S.

AU - Kim, S. J.

AU - Chung, D. Y.

AU - Kanatzidis, M. G.

PY - 1999

Y1 - 1999

N2 - Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.

AB - Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.

UR - https://www.scopus.com/pages/publications/0033301159

M3 - Conference article

AN - SCOPUS:0033301159

SN - 1094-2734

SP - 671

EP - 674

JO - International Conference on Thermoelectrics, ICT, Proceedings

JF - International Conference on Thermoelectrics, ICT, Proceedings

T2 - 18th International Conference on Thermoelectrics (ICT'99)

Y2 - 29 August 1999 through 2 September 1999

ER -

Measurement system for doping and alloying trends in new thermoelectric materials

Abstract

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