Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.
|Number of pages||4|
|Journal||International Conference on Thermoelectrics, ICT, Proceedings|
|State||Published - 1999|
|Event||18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA|
Duration: 29 Aug 1999 → 2 Sep 1999