TY - JOUR
T1 - Measurement system for doping and alloying trends in new thermoelectric materials
AU - Hogan, T.
AU - Ghelani, N.
AU - Loo, S.
AU - Sportouch, S.
AU - Kim, S. J.
AU - Chung, D. Y.
AU - Kanatzidis, M. G.
PY - 1999
Y1 - 1999
N2 - Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.
AB - Several new materials in the A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. To accommodate the large number of samples required for doping and alloying studies, a new measurement system has been designed with a high sample throughput. A second system is then utilized for complete characterization of the most promising samples. This paper presents a description of the systems and measurement techniques involved, with preliminary, data on some of the above mentioned compounds.
UR - http://www.scopus.com/inward/record.url?scp=0033301159&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0033301159
SN - 1094-2734
SP - 671
EP - 674
JO - International Conference on Thermoelectrics, ICT, Proceedings
JF - International Conference on Thermoelectrics, ICT, Proceedings
T2 - 18th International Conference on Thermoelectrics (ICT'99)
Y2 - 29 August 1999 through 2 September 1999
ER -