MBE growth of GeSn and sigesn heterojunctions for photonic devices

James S. Harris; Hai Lin; Robert Chen; Yijie Huo; Ed Fei; Seonghyun Paik; Seongjae Cho; Ted Kamins

doi:10.1149/05009.0601ecst

MBE growth of GeSn and sigesn heterojunctions for photonic devices

James S. Harris, Hai Lin, Robert Chen, Yijie Huo, Ed Fei, Seonghyun Paik, Seongjae Cho, Ted Kamins

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Strained Ge and GeSn are potentially direct bandgap Group IV materials suitable for photonic devices. We have grown both Ge and GeSn with controlled degrees of strain and GeSn/SiGeSn heterojunctions by low temperature MBE which demonstrate high quality and excellent optical properties, including stimulated emission. Gain calculations show that quantum wells of either strained Ge or GeSn that are direct bandgap provide gain comparable to III-V materials and will produce useful, low threshold lasers for on-chip optical communications.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	601-605
Number of pages	5
Edition	9
ISBN (Print)	9781607683575
DOIs	https://doi.org/10.1149/05009.0601ecst
State	Published - 2013
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 7 Oct 2012 → 12 Oct 2012

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	7/10/12 → 12/10/12

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10.1149/05009.0601ecst

Cite this

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title = "MBE growth of GeSn and sigesn heterojunctions for photonic devices",

abstract = "Strained Ge and GeSn are potentially direct bandgap Group IV materials suitable for photonic devices. We have grown both Ge and GeSn with controlled degrees of strain and GeSn/SiGeSn heterojunctions by low temperature MBE which demonstrate high quality and excellent optical properties, including stimulated emission. Gain calculations show that quantum wells of either strained Ge or GeSn that are direct bandgap provide gain comparable to III-V materials and will produce useful, low threshold lasers for on-chip optical communications.",

author = "Harris, {James S.} and Hai Lin and Robert Chen and Yijie Huo and Ed Fei and Seonghyun Paik and Seongjae Cho and Ted Kamins",

year = "2013",

doi = "10.1149/05009.0601ecst",

language = "English",

isbn = "9781607683575",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "9",

pages = "601--605",

booktitle = "SiGe, Ge, and Related Compounds 5",

edition = "9",

note = "5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting ; Conference date: 07-10-2012 Through 12-10-2012",

}

Harris, JS, Lin, H, Chen, R, Huo, Y, Fei, E, Paik, S, Cho, S & Kamins, T 2013, MBE growth of GeSn and sigesn heterojunctions for photonic devices. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, Electrochemical Society Inc., pp. 601-605, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 7/10/12. https://doi.org/10.1149/05009.0601ecst

MBE growth of GeSn and sigesn heterojunctions for photonic devices. / Harris, James S.; Lin, Hai; Chen, Robert et al.
SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. Electrochemical Society Inc., 2013. p. 601-605 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - MBE growth of GeSn and sigesn heterojunctions for photonic devices

AU - Harris, James S.

AU - Lin, Hai

AU - Chen, Robert

AU - Huo, Yijie

AU - Fei, Ed

AU - Paik, Seonghyun

AU - Cho, Seongjae

AU - Kamins, Ted

PY - 2013

Y1 - 2013

N2 - Strained Ge and GeSn are potentially direct bandgap Group IV materials suitable for photonic devices. We have grown both Ge and GeSn with controlled degrees of strain and GeSn/SiGeSn heterojunctions by low temperature MBE which demonstrate high quality and excellent optical properties, including stimulated emission. Gain calculations show that quantum wells of either strained Ge or GeSn that are direct bandgap provide gain comparable to III-V materials and will produce useful, low threshold lasers for on-chip optical communications.

AB - Strained Ge and GeSn are potentially direct bandgap Group IV materials suitable for photonic devices. We have grown both Ge and GeSn with controlled degrees of strain and GeSn/SiGeSn heterojunctions by low temperature MBE which demonstrate high quality and excellent optical properties, including stimulated emission. Gain calculations show that quantum wells of either strained Ge or GeSn that are direct bandgap provide gain comparable to III-V materials and will produce useful, low threshold lasers for on-chip optical communications.

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U2 - 10.1149/05009.0601ecst

DO - 10.1149/05009.0601ecst

M3 - Conference contribution

AN - SCOPUS:84885803900

SN - 9781607683575

T3 - ECS Transactions

SP - 601

EP - 605

BT - SiGe, Ge, and Related Compounds 5

PB - Electrochemical Society Inc.

T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting

Y2 - 7 October 2012 through 12 October 2012

ER -

MBE growth of GeSn and sigesn heterojunctions for photonic devices

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