Main factor determining the uniform step coverage in chemical vapor deposition

Chee Burm Shin, Gyeong Soon Hwang

Research output: Contribution to journalConference articlepeer-review


Profile evolution simulations during chemical vapor deposition based on a 2-D continuum model reveal that the type of surface kinetics plays an important role as a measure of determining step coverage of films deposited in a high aspect ratio trench or via. The linear surface kinetics, resulting from adsorption rate limitation, is found to be difficult to bring about conformal step coverage in a deep narrow trench without reducing the growth rate considerably; that is, under such a condition void free filling can not be achievable with holding an appropriate growth rate. High tendency of the precursor for chemical equilibrium on a surface, tending to cause the non-linear surface kinetics by surface reaction limitation, is mainly responsible for the significant improvement of step coverage in TEOS-based depositions.

Original languageEnglish
Pages (from-to)369-374
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199816 Apr 1998


Dive into the research topics of 'Main factor determining the uniform step coverage in chemical vapor deposition'. Together they form a unique fingerprint.

Cite this