Abstract
Profile evolution simulations during chemical vapor deposition based on a 2-D continuum model reveal that the type of surface kinetics plays an important role as a measure of determining step coverage of films deposited in a high aspect ratio trench or via. The linear surface kinetics, resulting from adsorption rate limitation, is found to be difficult to bring about conformal step coverage in a deep narrow trench without reducing the growth rate considerably; that is, under such a condition void free filling can not be achievable with holding an appropriate growth rate. High tendency of the precursor for chemical equilibrium on a surface, tending to cause the non-linear surface kinetics by surface reaction limitation, is mainly responsible for the significant improvement of step coverage in TEOS-based depositions.
| Original language | English |
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| Pages (from-to) | 369-374 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 514 |
| State | Published - 1998 |
| Event | Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: 13 Apr 1998 → 16 Apr 1998 |