@article{878ec6feba484e18993cfef413b020eb,
title = "Magneto-logic device based on a single-layer magnetic tunnel junction",
abstract = "A magnetic tunnel junction (MTJ) element can compute Boolean functions and also store the output of its last operation. Therefore, the MTJ shows potential for a universal logic element to implement sequential-logic functions as well as combinatorial ones. The established magneto-logic element has been designed and fabricated based on a triple-layer MTJ. We present a novel magneto-logic structure that consists of a single-layer MTJ and a current driver, which requires less processing steps with enhanced functional flexibility and uniformity.",
keywords = "Magnetic tunnel junction (MTJ), Magnetoresistive devices, Nonvolatile logic devices",
author = "Seungyeon Lee and Sunghoon Choa and Seungjun Lee and Hyungsoon Shin",
note = "Funding Information: Manuscript received January 3, 2007; revised May 1, 2007. This work was supported in part by the Ministry of Science and Technology under the National Program for Tera-Level Nanodevices, as a 21st Century Frontier Program, and in part by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) Support Program supervised by the Institute of Information Technology Advancement (IITA) (IITA-2006-C109006030030). The review of this brief was arranged by Editor C. Jungemann.",
year = "2007",
month = aug,
doi = "10.1109/TED.2007.900683",
language = "English",
volume = "54",
pages = "2040--2044",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}