Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering

S. Y. Park; Y. J. Yoo; P. J. Kim; Y. P. Lee; T. H. Kim; J. H. Kang

Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering

S. Y. Park, Y. J. Yoo, P. J. Kim, Y. P. Lee, T. H. Kim, J. H. Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Zn_1-xMn_xO films with smooth surfaces were prepared Si(100) substrates by reactive cosputtering of high-purity Mn and ZnO targets in an oxygen ambient with partial pressures ranging from 2.2 × 10 ^-7 to 1.2 × 10^-5 Torr. The film deposited at an oxygen partial pressure of 2.2 × 10^-7 Torr exhibited a ferromagnetic behavior with a Curie temperature above 350 K while the films for oxygen partial pressures higher than 1.2 × 10^-6 Torr revealed nonmagnetic properties. Our results evidently show that the oxygen vacancy plays an important role in the magnetic ordering of Mn-doped ZnO film. Our experimental results show the possibility for applications of Mn-doped ZnO-based tunneling devices.

Original language	English
Pages (from-to)	1029-1033
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	3
State	Published - Sep 2006

Keywords

Magnetic impurity interactions
Magnetic semiconductor

Cite this

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title = "Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering",

abstract = "Zn1-xMnxO films with smooth surfaces were prepared Si(100) substrates by reactive cosputtering of high-purity Mn and ZnO targets in an oxygen ambient with partial pressures ranging from 2.2 × 10 -7 to 1.2 × 10-5 Torr. The film deposited at an oxygen partial pressure of 2.2 × 10-7 Torr exhibited a ferromagnetic behavior with a Curie temperature above 350 K while the films for oxygen partial pressures higher than 1.2 × 10-6 Torr revealed nonmagnetic properties. Our results evidently show that the oxygen vacancy plays an important role in the magnetic ordering of Mn-doped ZnO film. Our experimental results show the possibility for applications of Mn-doped ZnO-based tunneling devices.",

keywords = "Magnetic impurity interactions, Magnetic semiconductor",

author = "Park, {S. Y.} and Yoo, {Y. J.} and Kim, {P. J.} and Lee, {Y. P.} and Kim, {T. H.} and Kang, {J. H.}",

year = "2006",

month = sep,

language = "English",

volume = "49",

pages = "1029--1033",

journal = "Journal of the Korean Physical Society",

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T1 - Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering

AU - Park, S. Y.

AU - Yoo, Y. J.

AU - Kim, P. J.

AU - Lee, Y. P.

AU - Kim, T. H.

AU - Kang, J. H.

PY - 2006/9

Y1 - 2006/9

N2 - Zn1-xMnxO films with smooth surfaces were prepared Si(100) substrates by reactive cosputtering of high-purity Mn and ZnO targets in an oxygen ambient with partial pressures ranging from 2.2 × 10 -7 to 1.2 × 10-5 Torr. The film deposited at an oxygen partial pressure of 2.2 × 10-7 Torr exhibited a ferromagnetic behavior with a Curie temperature above 350 K while the films for oxygen partial pressures higher than 1.2 × 10-6 Torr revealed nonmagnetic properties. Our results evidently show that the oxygen vacancy plays an important role in the magnetic ordering of Mn-doped ZnO film. Our experimental results show the possibility for applications of Mn-doped ZnO-based tunneling devices.

AB - Zn1-xMnxO films with smooth surfaces were prepared Si(100) substrates by reactive cosputtering of high-purity Mn and ZnO targets in an oxygen ambient with partial pressures ranging from 2.2 × 10 -7 to 1.2 × 10-5 Torr. The film deposited at an oxygen partial pressure of 2.2 × 10-7 Torr exhibited a ferromagnetic behavior with a Curie temperature above 350 K while the films for oxygen partial pressures higher than 1.2 × 10-6 Torr revealed nonmagnetic properties. Our results evidently show that the oxygen vacancy plays an important role in the magnetic ordering of Mn-doped ZnO film. Our experimental results show the possibility for applications of Mn-doped ZnO-based tunneling devices.

KW - Magnetic impurity interactions

KW - Magnetic semiconductor

UR - http://www.scopus.com/inward/record.url?scp=33749860459&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33749860459

SN - 0374-4884

VL - 49

SP - 1029

EP - 1033

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering

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Keywords

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