Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering

S. Y. Park, Y. J. Yoo, P. J. Kim, Y. P. Lee, T. H. Kim, J. H. Kang

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Zn1-xMnxO films with smooth surfaces were prepared Si(100) substrates by reactive cosputtering of high-purity Mn and ZnO targets in an oxygen ambient with partial pressures ranging from 2.2 × 10 -7 to 1.2 × 10-5 Torr. The film deposited at an oxygen partial pressure of 2.2 × 10-7 Torr exhibited a ferromagnetic behavior with a Curie temperature above 350 K while the films for oxygen partial pressures higher than 1.2 × 10-6 Torr revealed nonmagnetic properties. Our results evidently show that the oxygen vacancy plays an important role in the magnetic ordering of Mn-doped ZnO film. Our experimental results show the possibility for applications of Mn-doped ZnO-based tunneling devices.

Original languageEnglish
Pages (from-to)1029-1033
Number of pages5
JournalJournal of the Korean Physical Society
Issue number3
StatePublished - Sep 2006


  • Magnetic impurity interactions
  • Magnetic semiconductor


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