Zn1-xMnxO films with smooth surfaces were prepared Si(100) substrates by reactive cosputtering of high-purity Mn and ZnO targets in an oxygen ambient with partial pressures ranging from 2.2 × 10 -7 to 1.2 × 10-5 Torr. The film deposited at an oxygen partial pressure of 2.2 × 10-7 Torr exhibited a ferromagnetic behavior with a Curie temperature above 350 K while the films for oxygen partial pressures higher than 1.2 × 10-6 Torr revealed nonmagnetic properties. Our results evidently show that the oxygen vacancy plays an important role in the magnetic ordering of Mn-doped ZnO film. Our experimental results show the possibility for applications of Mn-doped ZnO-based tunneling devices.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|State||Published - Sep 2006|
- Magnetic impurity interactions
- Magnetic semiconductor