Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics

Tae Hee Kim; Jagadeesh S. Moodera

doi:10.1063/1.2390622

Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics

Tae Hee Kim, Jagadeesh S. Moodera

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Based on superconducting Mg B2 films with higher critical temperature of 39 K and the advantage of the conventional superconductors, those that follow Bardeen-Cooper-Shrieffer theory, fabrication of quasiparticle, and Josephson tunnel junctions have been investigated. To explore the potential of Mg B2 for superconductive electronics, the essentials such as clean high quality thin film surfaces and reproducible tunnel junction fabrication are addressed. Our results show clean tunneling characteristics for in situ prepared Mg B2 junctions on Si wafer with the measured superconducting energy gap values in good agreement with theory and the feasibility of the technology. The recent results on all-epitaxial Mg B2 MgOMg B2 Josephson junctions will be also reported.

Original language	English
Article number	113904
Journal	Journal of Applied Physics
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.2390622
State	Published - 2006

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@article{b6d08d03da7e4faebfe16c02f15548e0,

title = "Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics",

abstract = "Based on superconducting Mg B2 films with higher critical temperature of 39 K and the advantage of the conventional superconductors, those that follow Bardeen-Cooper-Shrieffer theory, fabrication of quasiparticle, and Josephson tunnel junctions have been investigated. To explore the potential of Mg B2 for superconductive electronics, the essentials such as clean high quality thin film surfaces and reproducible tunnel junction fabrication are addressed. Our results show clean tunneling characteristics for in situ prepared Mg B2 junctions on Si wafer with the measured superconducting energy gap values in good agreement with theory and the feasibility of the technology. The recent results on all-epitaxial Mg B2 MgOMg B2 Josephson junctions will be also reported.",

author = "Kim, {Tae Hee} and Moodera, {Jagadeesh S.}",

note = "Funding Information: This research was supported by an ONR Grant no. N00014-02-1-0119and partly by the Basic Research Program of the Korea Science and Engineering Foundation (No. R01-2006-000-11227-0) and a Korea Research Foundation grant (KRF-2006-531-C00026) funded by the Korean Government.",

year = "2006",

doi = "10.1063/1.2390622",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics

AU - Kim, Tae Hee

AU - Moodera, Jagadeesh S.

N1 - Funding Information: This research was supported by an ONR Grant no. N00014-02-1-0119and partly by the Basic Research Program of the Korea Science and Engineering Foundation (No. R01-2006-000-11227-0) and a Korea Research Foundation grant (KRF-2006-531-C00026) funded by the Korean Government.

PY - 2006

Y1 - 2006

N2 - Based on superconducting Mg B2 films with higher critical temperature of 39 K and the advantage of the conventional superconductors, those that follow Bardeen-Cooper-Shrieffer theory, fabrication of quasiparticle, and Josephson tunnel junctions have been investigated. To explore the potential of Mg B2 for superconductive electronics, the essentials such as clean high quality thin film surfaces and reproducible tunnel junction fabrication are addressed. Our results show clean tunneling characteristics for in situ prepared Mg B2 junctions on Si wafer with the measured superconducting energy gap values in good agreement with theory and the feasibility of the technology. The recent results on all-epitaxial Mg B2 MgOMg B2 Josephson junctions will be also reported.

AB - Based on superconducting Mg B2 films with higher critical temperature of 39 K and the advantage of the conventional superconductors, those that follow Bardeen-Cooper-Shrieffer theory, fabrication of quasiparticle, and Josephson tunnel junctions have been investigated. To explore the potential of Mg B2 for superconductive electronics, the essentials such as clean high quality thin film surfaces and reproducible tunnel junction fabrication are addressed. Our results show clean tunneling characteristics for in situ prepared Mg B2 junctions on Si wafer with the measured superconducting energy gap values in good agreement with theory and the feasibility of the technology. The recent results on all-epitaxial Mg B2 MgOMg B2 Josephson junctions will be also reported.

UR - http://www.scopus.com/inward/record.url?scp=33845804363&partnerID=8YFLogxK

U2 - 10.1063/1.2390622

DO - 10.1063/1.2390622

M3 - Article

AN - SCOPUS:33845804363

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 113904

ER -

Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics

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