Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics

Tae Hee Kim; Jagadeesh S. Moodera

doi:10.1063/1.2390622

Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics

Tae Hee Kim, Jagadeesh S. Moodera

Department of Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Based on superconducting Mg B2 films with higher critical temperature of 39 K and the advantage of the conventional superconductors, those that follow Bardeen-Cooper-Shrieffer theory, fabrication of quasiparticle, and Josephson tunnel junctions have been investigated. To explore the potential of Mg B2 for superconductive electronics, the essentials such as clean high quality thin film surfaces and reproducible tunnel junction fabrication are addressed. Our results show clean tunneling characteristics for in situ prepared Mg B2 junctions on Si wafer with the measured superconducting energy gap values in good agreement with theory and the feasibility of the technology. The recent results on all-epitaxial Mg B2 MgOMg B2 Josephson junctions will be also reported.

Original language	English
Article number	113904
Journal	Journal of Applied Physics
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.2390622
State	Published - 2006

Bibliographical note

Funding Information:
This research was supported by an ONR Grant no. N00014-02-1-0119and partly by the Basic Research Program of the Korea Science and Engineering Foundation (No. R01-2006-000-11227-0) and a Korea Research Foundation grant (KRF-2006-531-C00026) funded by the Korean Government.

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abstract = "Based on superconducting Mg B2 films with higher critical temperature of 39 K and the advantage of the conventional superconductors, those that follow Bardeen-Cooper-Shrieffer theory, fabrication of quasiparticle, and Josephson tunnel junctions have been investigated. To explore the potential of Mg B2 for superconductive electronics, the essentials such as clean high quality thin film surfaces and reproducible tunnel junction fabrication are addressed. Our results show clean tunneling characteristics for in situ prepared Mg B2 junctions on Si wafer with the measured superconducting energy gap values in good agreement with theory and the feasibility of the technology. The recent results on all-epitaxial Mg B2 MgOMg B2 Josephson junctions will be also reported.",

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Magnesium diboride superconductor thin film tunnel junctions for superconductive electronics

Abstract

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